Lateral schottky GaN rectifiers formed by Si + ion implantation

Y. Irokawa, Ji Hyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

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2 Citations (Scopus)


Type conversion of p-GaN by direct Si + ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si + activation percentage was measured as a function of annealing time (30-300 sec) and temperature (1,000-1,200°C), reaching a maximum of ∼30% for 1,200°C, 2-min anneals. The resulting n-type carrier concentration was 1.1 × 10 18 cm -3 for a moderate Si + ion dose of ∼2 × 10 14 cm -2. The lateral Schottky diodes displayed a negative temperature coefficient of -0.15 V·K for reverse breakdown voltage.

Original languageEnglish
Pages (from-to)426-430
Number of pages5
JournalJournal of Electronic Materials
Issue number5
Publication statusPublished - 2004 May 1
Externally publishedYes



  • GaN
  • Ion implantation
  • Lateral schottky diodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Irokawa, Y., Kim, J. H., Ren, F., Baik, K. H., Gila, B. P., Abernathy, C. R., Pearton, S. J., Pan, C. C., Chen, G. T., & Chyi, J. I. (2004). Lateral schottky GaN rectifiers formed by Si + ion implantation. Journal of Electronic Materials, 33(5), 426-430.