Lateral schottky GaN rectifiers formed by Si + ion implantation

Y. Irokawa, Ji Hyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Type conversion of p-GaN by direct Si + ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si + activation percentage was measured as a function of annealing time (30-300 sec) and temperature (1,000-1,200°C), reaching a maximum of ∼30% for 1,200°C, 2-min anneals. The resulting n-type carrier concentration was 1.1 × 10 18 cm -3 for a moderate Si + ion dose of ∼2 × 10 14 cm -2. The lateral Schottky diodes displayed a negative temperature coefficient of -0.15 V·K for reverse breakdown voltage.

Original languageEnglish
Pages (from-to)426-430
Number of pages5
JournalJournal of Electronic Materials
Volume33
Issue number5
Publication statusPublished - 2004 May 1
Externally publishedYes

Fingerprint

rectifiers
Schottky diodes
Ion implantation
ion implantation
Diodes
Annealing
Negative temperature coefficient
annealing
Electric breakdown
electrical faults
Carrier concentration
Chemical activation
activation
Ions
Fabrication
dosage
fabrication
temperature
coefficients
ions

Keywords

  • GaN
  • Ion implantation
  • Lateral schottky diodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Irokawa, Y., Kim, J. H., Ren, F., Baik, K. H., Gila, B. P., Abernathy, C. R., ... Chyi, J. I. (2004). Lateral schottky GaN rectifiers formed by Si + ion implantation. Journal of Electronic Materials, 33(5), 426-430.

Lateral schottky GaN rectifiers formed by Si + ion implantation. / Irokawa, Y.; Kim, Ji Hyun; Ren, F.; Baik, K. H.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Pan, C. C.; Chen, G. T.; Chyi, J. I.

In: Journal of Electronic Materials, Vol. 33, No. 5, 01.05.2004, p. 426-430.

Research output: Contribution to journalArticle

Irokawa, Y, Kim, JH, Ren, F, Baik, KH, Gila, BP, Abernathy, CR, Pearton, SJ, Pan, CC, Chen, GT & Chyi, JI 2004, 'Lateral schottky GaN rectifiers formed by Si + ion implantation', Journal of Electronic Materials, vol. 33, no. 5, pp. 426-430.
Irokawa Y, Kim JH, Ren F, Baik KH, Gila BP, Abernathy CR et al. Lateral schottky GaN rectifiers formed by Si + ion implantation. Journal of Electronic Materials. 2004 May 1;33(5):426-430.
Irokawa, Y. ; Kim, Ji Hyun ; Ren, F. ; Baik, K. H. ; Gila, B. P. ; Abernathy, C. R. ; Pearton, S. J. ; Pan, C. C. ; Chen, G. T. ; Chyi, J. I. / Lateral schottky GaN rectifiers formed by Si + ion implantation. In: Journal of Electronic Materials. 2004 ; Vol. 33, No. 5. pp. 426-430.
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AU - Ren, F.

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AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Pan, C. C.

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