Abstract
We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.
| Original language | English |
|---|---|
| Pages (from-to) | 209-213 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 571 |
| Publication status | Published - 1999 Dec 1 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes. / Jung, S. K.; Hwang, S. W.; Park, Jung ho; Min, B. D.; Kim, E. K.; Yong, K. I.M.
In: Materials Research Society Symposium - Proceedings, Vol. 571, 01.12.1999, p. 209-213.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes
AU - Jung, S. K.
AU - Hwang, S. W.
AU - Park, Jung ho
AU - Min, B. D.
AU - Kim, E. K.
AU - Yong, K. I.M.
PY - 1999/12/1
Y1 - 1999/12/1
N2 - We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.
AB - We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.
UR - http://www.scopus.com/inward/record.url?scp=0033746661&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033746661&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033746661
VL - 571
SP - 209
EP - 213
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
SN - 0272-9172
ER -