Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes

S. K. Jung, S. W. Hwang, J. H. Park, B. D. Min, E. K. Kim, K. I.M. Yong

Research output: Contribution to journalArticle

Abstract

We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.

Original languageEnglish
Pages (from-to)209-213
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume571
DOIs
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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