Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes

S. K. Jung; S. W. Hwang; J. H. Park; B. D. Min; E. K. Kim; K. I.M. Yong

doi:10.1557/proc-571-209

Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes

S. K. Jung, S. W. Hwang, J. H. Park, B. D. Min, E. K. Kim, K. I.M. Yong

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.

Original language	English
Pages (from-to)	209-213
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	571
DOIs	https://doi.org/10.1557/proc-571-209
Publication status	Published - 1999

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-571-209

Fingerprint Dive into the research topics of 'Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes'. Together they form a unique fingerprint.

Cite this

@article{9cd6378456bb47af9020fced72510b44,

title = "Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes",

abstract = "We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.",

author = "Jung, {S. K.} and Hwang, {S. W.} and Park, {J. H.} and Min, {B. D.} and Kim, {E. K.} and Yong, {K. I.M.}",

year = "1999",

doi = "10.1557/proc-571-209",

language = "English",

volume = "571",

pages = "209--213",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes

AU - Jung, S. K.

AU - Hwang, S. W.

AU - Park, J. H.

AU - Min, B. D.

AU - Kim, E. K.

AU - Yong, K. I.M.

PY - 1999

Y1 - 1999

N2 - We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.

AB - We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.

UR - http://www.scopus.com/inward/record.url?scp=0033746661&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033746661&partnerID=8YFLogxK

U2 - 10.1557/proc-571-209

DO - 10.1557/proc-571-209

M3 - Article

AN - SCOPUS:0033746661

VL - 571

SP - 209

EP - 213

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

SN - 0272-9172

ER -

Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this