Abstract
We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.
| Original language | English |
|---|---|
| Pages (from-to) | 209-213 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 571 |
| Publication status | Published - 1999 Dec 1 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Jung, S. K., Hwang, S. W., Park, J. H., Min, B. D., Kim, E. K., & Yong, K. I. M. (1999). Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes. Materials Research Society Symposium - Proceedings, 571, 209-213.