Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes

S. K. Jung, S. W. Hwang, Jung ho Park, B. D. Min, E. K. Kim, K. I.M. Yong

Research output: Contribution to journalArticle

Abstract

We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.

Original languageEnglish
Pages (from-to)209-213
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume571
Publication statusPublished - 1999 Dec 1

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Semiconductor quantum dots
quantum dots
Electrodes
electrodes
Resonant tunneling
resonant tunneling
Current voltage characteristics
Aluminum
Metals
spacing
wafers
aluminum
indium arsenide
electric potential
metals
electrons

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes. / Jung, S. K.; Hwang, S. W.; Park, Jung ho; Min, B. D.; Kim, E. K.; Yong, K. I.M.

In: Materials Research Society Symposium - Proceedings, Vol. 571, 01.12.1999, p. 209-213.

Research output: Contribution to journalArticle

Jung, S. K. ; Hwang, S. W. ; Park, Jung ho ; Min, B. D. ; Kim, E. K. ; Yong, K. I.M. / Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes. In: Materials Research Society Symposium - Proceedings. 1999 ; Vol. 571. pp. 209-213.
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