Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes

S. K. Jung; S. W. Hwang; J. H. Park; B. D. Min; E. K. Kim; K. I.M. Yong

doi:10.1557/proc-571-209

Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes

S. K. Jung, S. W. Hwang, J. H. Park, B. D. Min, E. K. Kim, K. I.M. Yong

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.

Original language	English
Pages (from-to)	209-213
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	571
DOIs	https://doi.org/10.1557/proc-571-209
Publication status	Published - 1999

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes",

abstract = "We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.",

author = "Jung, {S. K.} and Hwang, {S. W.} and Park, {J. H.} and Min, {B. D.} and Kim, {E. K.} and Yong, {K. I.M.}",

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AU - Jung, S. K.

AU - Hwang, S. W.

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AU - Min, B. D.

AU - Kim, E. K.

AU - Yong, K. I.M.

PY - 1999

Y1 - 1999

N2 - We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.

AB - We have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-OD resonant tunneling through the single quantum dot positioned in between the electrodes.

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M3 - Article

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JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

SN - 0272-9172

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Lateral transport through self-assembled InAs quantum dots located in the narrow gap electrodes

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