Lateral Trench Electrode Power MOS including a local doping region for power electronic system

D. J. Kim; M. Y. Sung; E. G. Kang; H. S. Chung; E. S. Nahm; D. J. Lee; J. H. Lee

Lateral Trench Electrode Power MOS including a local doping region for power electronic system

D. J. Kim, M. Y. Sung, E. G. Kang, H. S. Chung, E. S. Nahm, D. J. Lee, J. H. Lee

* Honorary professors

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

Original language	English
Title of host publication	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Editors	X.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	259-262
Number of pages	4
Volume	4
ISBN (Print)	7309039157
Publication status	Published - 2004
Event	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China Duration: 2004 Mar 15 → 2004 Mar 16

Other

Other	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Country/Territory	China
City	Shanghai
Period	04/3/15 → 04/3/16

ASJC Scopus subject areas

Engineering(all)

Cite this

Kim, D. J., Sung, M. Y., Kang, E. G., Chung, H. S., Nahm, E. S., Lee, D. J., & Lee, J. H. (2004). Lateral Trench Electrode Power MOS including a local doping region for power electronic system. In X. P. Qu, G. P. Ru, B. Z. Li, B. Mizuno, & H. Iwai (Eds.), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 (Vol. 4, pp. 259-262). Institute of Electrical and Electronics Engineers Inc..

Lateral Trench Electrode Power MOS including a local doping region for power electronic system. / Kim, D. J.; Sung, M. Y.; Kang, E. G. et al.

Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. ed. / X.P. Qu; G.P. Ru; B.Z. Li; B. Mizuno; H. Iwai. Vol. 4 Institute of Electrical and Electronics Engineers Inc., 2004. p. 259-262.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, DJ, Sung, MY, Kang, EG, Chung, HS, Nahm, ES, Lee, DJ & Lee, JH 2004, Lateral Trench Electrode Power MOS including a local doping region for power electronic system. in XP Qu, GP Ru, BZ Li, B Mizuno & H Iwai (eds), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. vol. 4, Institute of Electrical and Electronics Engineers Inc., pp. 259-262, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004, Shanghai, China, 04/3/15.

Kim DJ, Sung MY, Kang EG, Chung HS, Nahm ES, Lee DJ et al. Lateral Trench Electrode Power MOS including a local doping region for power electronic system. In Qu XP, Ru GP, Li BZ, Mizuno B, Iwai H, editors, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. Vol. 4. Institute of Electrical and Electronics Engineers Inc. 2004. p. 259-262

Kim, D. J. ; Sung, M. Y. ; Kang, E. G. et al. / Lateral Trench Electrode Power MOS including a local doping region for power electronic system. Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. editor / X.P. Qu ; G.P. Ru ; B.Z. Li ; B. Mizuno ; H. Iwai. Vol. 4 Institute of Electrical and Electronics Engineers Inc., 2004. pp. 259-262

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title = "Lateral Trench Electrode Power MOS including a local doping region for power electronic system",

abstract = "In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called {"}LTEMOSFET{"}(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.",

author = "Kim, {D. J.} and Sung, {M. Y.} and Kang, {E. G.} and Chung, {H. S.} and Nahm, {E. S.} and Lee, {D. J.} and Lee, {J. H.}",

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AU - Kim, D. J.

AU - Sung, M. Y.

AU - Kang, E. G.

AU - Chung, H. S.

AU - Nahm, E. S.

AU - Lee, D. J.

AU - Lee, J. H.

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N2 - In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

AB - In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

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BT - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

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A2 - Ru, G.P.

A2 - Li, B.Z.

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T2 - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Y2 - 15 March 2004 through 16 March 2004

ER -

Lateral Trench Electrode Power MOS including a local doping region for power electronic system

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