Lateral Trench Electrode Power MOS including a local doping region for power electronic system

D. J. Kim, M. Y. Sung, E. G. Kang, H. S. Chung, E. S. Nahm, D. J. Lee, J. H. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

Original languageEnglish
Title of host publicationExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
EditorsX.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages259-262
Number of pages4
Volume4
ISBN (Print)7309039157
Publication statusPublished - 2004
EventExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China
Duration: 2004 Mar 152004 Mar 16

Other

OtherExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
CountryChina
CityShanghai
Period04/3/1504/3/16

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Lateral Trench Electrode Power MOS including a local doping region for power electronic system'. Together they form a unique fingerprint.

  • Cite this

    Kim, D. J., Sung, M. Y., Kang, E. G., Chung, H. S., Nahm, E. S., Lee, D. J., & Lee, J. H. (2004). Lateral Trench Electrode Power MOS including a local doping region for power electronic system. In X. P. Qu, G. P. Ru, B. Z. Li, B. Mizuno, & H. Iwai (Eds.), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 (Vol. 4, pp. 259-262). Institute of Electrical and Electronics Engineers Inc..