Lateral trench IGBT with effective p+ diverter having superior electrical characteristics for smart power IC

E. G. Kang, S. H. Moon, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, forward blocking voltage was decreased, greatly because n-drift layer corresponding to punch-through was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was 140V. That of the conventional LTIGBT of the same size was 105V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p+ diverter was occurred, lately. Therefore, the p+ diverter of the proposed LTIGBT didn't related to breakdown voltage in a different way conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540A/cm2, and 1453A/cm3, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.

Original languageEnglish
Title of host publicationIEEE International Symposium on Industrial Electronics
Pages2059-2062
Number of pages4
Volume3
Publication statusPublished - 2001 Jan 1
Event2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001) - Pusan, Korea, Republic of
Duration: 2001 Jun 122001 Jun 16

Other

Other2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001)
CountryKorea, Republic of
CityPusan
Period01/6/1201/6/16

Fingerprint

Insulated gate bipolar transistors (IGBT)
Cathodes
Electric potential
Electrodes
Oxides
Electric breakdown
Anodes
Current density
Electric fields

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kang, E. G., Moon, S. H., & Sung, M. Y. (2001). Lateral trench IGBT with effective p+ diverter having superior electrical characteristics for smart power IC. In IEEE International Symposium on Industrial Electronics (Vol. 3, pp. 2059-2062)

Lateral trench IGBT with effective p+ diverter having superior electrical characteristics for smart power IC. / Kang, E. G.; Moon, S. H.; Sung, Man Young.

IEEE International Symposium on Industrial Electronics. Vol. 3 2001. p. 2059-2062.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kang, EG, Moon, SH & Sung, MY 2001, Lateral trench IGBT with effective p+ diverter having superior electrical characteristics for smart power IC. in IEEE International Symposium on Industrial Electronics. vol. 3, pp. 2059-2062, 2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001), Pusan, Korea, Republic of, 01/6/12.
Kang EG, Moon SH, Sung MY. Lateral trench IGBT with effective p+ diverter having superior electrical characteristics for smart power IC. In IEEE International Symposium on Industrial Electronics. Vol. 3. 2001. p. 2059-2062
Kang, E. G. ; Moon, S. H. ; Sung, Man Young. / Lateral trench IGBT with effective p+ diverter having superior electrical characteristics for smart power IC. IEEE International Symposium on Industrial Electronics. Vol. 3 2001. pp. 2059-2062
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