Laterally grown SnO2 nanowires and their NO2 gas sensing characteristics

Jae Hwan Park, Dong Gun Lim, Young Jin Choi, Dong-Wan Kim, Kyoung Jin Choi, Jae Gwan Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

One dimensional semiconducting nanomaterials have attracted considerable interest for their potential as the building blocks for fabricating various nanodevices. In this paper, a simple and efficient way of preparing highly sensitive SnO2 nanowire-based gas sensor without an arduous lithography process was studied. The SnO2 nanowires could be grown laterally upon the Si substrate by separating the Au catalyst layer in the substrate. As the electric current is transported along the networks of the nanowires, not along the bottom layer on the substrate, the sensitivity to gases was maximized in this lateral-type structures.

Original languageEnglish
Title of host publication2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages1054-1057
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China
Duration: 2007 Aug 22007 Aug 5

Other

Other2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
CountryChina
CityHong Kong
Period07/8/207/8/5

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Keywords

  • Gas sensor
  • Nanodevice
  • Nanowire
  • SnO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Park, J. H., Lim, D. G., Choi, Y. J., Kim, D-W., Choi, K. J., & Park, J. G. (2007). Laterally grown SnO2 nanowires and their NO2 gas sensing characteristics. In 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings (pp. 1054-1057). [4601364] https://doi.org/10.1109/NANO.2007.4601364