Laterally overgrown GaN/InGaN Multi-quantum well heterostructures: Electrical and optical properties

Alexander Polyakov, Anatoliy Govorkov, Nikolay Smirnov, Alexander Markov, In Hwan Lee, Haeng Keun Ahn, Sergey Karpov, Stephen Pearton

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Multi-quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterization data is given, invoking quantum-mechanical simulation of the grown heterostructures.

Original languageEnglish
Pages (from-to)1383-1385
Number of pages3
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume207
Issue number6
DOIs
Publication statusPublished - 2010 Jun

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Keywords

  • Electrical properties
  • GaN/InGaN
  • MOCVD
  • Optical properties
  • Quantum wells
  • Simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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