Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films

Kyung Hoon Cho, Chang Hak Choi, Joo Young Choi, Tae Geun Seong, Sahn Nahm, Chong-Yun Kang, Seok Jin Yoon, Jong Hee Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The effect of oxygen partial pressure (OPP) on the leakage current density of Bi5Nb3O15 (B5N3) films grown on Pt electrodes was investigated. The leakage current density was very high for the film grown under a low OPP of 1.7 mTorr, but was significantly reduced by the subsequent annealing under a high oxygen pressure or for the film grown under high OPP of 5.1 mTorr. The variation of the leakage current density with OPP was explained by the number of oxygen vacancies, which produced electron trap sites at the interface between the Pt electrode and the B5N3 film. Schottky emission was postulated as the leakage current mechanism of the B5N3 films. The barrier height between the Pt electrode and the B5N3 film grown under a high OPP of 5.1 mTorr was approximately 1.55 eV, but decreased to 0.81 eV for the film grown under a low OPP of 1.7 mTorr due to the presence of the oxygen vacancy.

Original languageEnglish
Pages (from-to)513-516
Number of pages4
JournalJournal of the European Ceramic Society
Volume30
Issue number2
DOIs
Publication statusPublished - 2010 Jan 1

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Oxygen vacancies
Leakage currents
Partial pressure
Oxygen
Current density
Electrodes
Electron traps
Annealing

Keywords

  • BiNbO
  • Capacitors
  • Films
  • Leakage current density

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films. / Cho, Kyung Hoon; Choi, Chang Hak; Choi, Joo Young; Seong, Tae Geun; Nahm, Sahn; Kang, Chong-Yun; Yoon, Seok Jin; Kim, Jong Hee.

In: Journal of the European Ceramic Society, Vol. 30, No. 2, 01.01.2010, p. 513-516.

Research output: Contribution to journalArticle

Cho, Kyung Hoon ; Choi, Chang Hak ; Choi, Joo Young ; Seong, Tae Geun ; Nahm, Sahn ; Kang, Chong-Yun ; Yoon, Seok Jin ; Kim, Jong Hee. / Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films. In: Journal of the European Ceramic Society. 2010 ; Vol. 30, No. 2. pp. 513-516.
@article{1976fa16b02d4d5fb631999b4b61d834,
title = "Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films",
abstract = "The effect of oxygen partial pressure (OPP) on the leakage current density of Bi5Nb3O15 (B5N3) films grown on Pt electrodes was investigated. The leakage current density was very high for the film grown under a low OPP of 1.7 mTorr, but was significantly reduced by the subsequent annealing under a high oxygen pressure or for the film grown under high OPP of 5.1 mTorr. The variation of the leakage current density with OPP was explained by the number of oxygen vacancies, which produced electron trap sites at the interface between the Pt electrode and the B5N3 film. Schottky emission was postulated as the leakage current mechanism of the B5N3 films. The barrier height between the Pt electrode and the B5N3 film grown under a high OPP of 5.1 mTorr was approximately 1.55 eV, but decreased to 0.81 eV for the film grown under a low OPP of 1.7 mTorr due to the presence of the oxygen vacancy.",
keywords = "BiNbO, Capacitors, Films, Leakage current density",
author = "Cho, {Kyung Hoon} and Choi, {Chang Hak} and Choi, {Joo Young} and Seong, {Tae Geun} and Sahn Nahm and Chong-Yun Kang and Yoon, {Seok Jin} and Kim, {Jong Hee}",
year = "2010",
month = "1",
day = "1",
doi = "10.1016/j.jeurceramsoc.2009.04.029",
language = "English",
volume = "30",
pages = "513--516",
journal = "Journal of the European Ceramic Society",
issn = "0955-2219",
publisher = "Elsevier BV",
number = "2",

}

TY - JOUR

T1 - Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films

AU - Cho, Kyung Hoon

AU - Choi, Chang Hak

AU - Choi, Joo Young

AU - Seong, Tae Geun

AU - Nahm, Sahn

AU - Kang, Chong-Yun

AU - Yoon, Seok Jin

AU - Kim, Jong Hee

PY - 2010/1/1

Y1 - 2010/1/1

N2 - The effect of oxygen partial pressure (OPP) on the leakage current density of Bi5Nb3O15 (B5N3) films grown on Pt electrodes was investigated. The leakage current density was very high for the film grown under a low OPP of 1.7 mTorr, but was significantly reduced by the subsequent annealing under a high oxygen pressure or for the film grown under high OPP of 5.1 mTorr. The variation of the leakage current density with OPP was explained by the number of oxygen vacancies, which produced electron trap sites at the interface between the Pt electrode and the B5N3 film. Schottky emission was postulated as the leakage current mechanism of the B5N3 films. The barrier height between the Pt electrode and the B5N3 film grown under a high OPP of 5.1 mTorr was approximately 1.55 eV, but decreased to 0.81 eV for the film grown under a low OPP of 1.7 mTorr due to the presence of the oxygen vacancy.

AB - The effect of oxygen partial pressure (OPP) on the leakage current density of Bi5Nb3O15 (B5N3) films grown on Pt electrodes was investigated. The leakage current density was very high for the film grown under a low OPP of 1.7 mTorr, but was significantly reduced by the subsequent annealing under a high oxygen pressure or for the film grown under high OPP of 5.1 mTorr. The variation of the leakage current density with OPP was explained by the number of oxygen vacancies, which produced electron trap sites at the interface between the Pt electrode and the B5N3 film. Schottky emission was postulated as the leakage current mechanism of the B5N3 films. The barrier height between the Pt electrode and the B5N3 film grown under a high OPP of 5.1 mTorr was approximately 1.55 eV, but decreased to 0.81 eV for the film grown under a low OPP of 1.7 mTorr due to the presence of the oxygen vacancy.

KW - BiNbO

KW - Capacitors

KW - Films

KW - Leakage current density

UR - http://www.scopus.com/inward/record.url?scp=70350704611&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70350704611&partnerID=8YFLogxK

U2 - 10.1016/j.jeurceramsoc.2009.04.029

DO - 10.1016/j.jeurceramsoc.2009.04.029

M3 - Article

VL - 30

SP - 513

EP - 516

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

SN - 0955-2219

IS - 2

ER -