Leakage current mechanisms in sub-50 nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes

Eun Ae Chung, Young Pil Kim, Kab Jin Nam, Sungsam Lee, Ji Young Min, Yu Gyun Shin, Siyoung Choi, Gyoyoung Jin, Joo Tae Moon, Sangsig Kim

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