Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p -contacts

Hyunsoo Kim, Jaehee Cho, Yongjo Park, Tae Yeon Seong

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The origins of leakage currents and passivation effects of GaN-based light emitting diodes fabricated with Ag p -contacts have been investigated by electrical measurements. A significant increase in reverse leakage current is attributed to the surface migration of Ag. A passivation of mesa sidewalls by Si O2 is found to be effective in suppressing the reverse leakage. However, the passivation results in a somewhat increase in the forward leakage at moderate voltages. Such forward leakage is explained in terms of the presence of local deep-level states in p-GaN generated during Si O2 deposition, acting as a parasitic diode with a lower barrier height.

Original languageEnglish
Article number092115
JournalApplied Physics Letters
Volume92
Issue number9
DOIs
Publication statusPublished - 2008 Mar 14

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passivity
leakage
light emitting diodes
mesas
electrical measurement
diodes
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p -contacts. / Kim, Hyunsoo; Cho, Jaehee; Park, Yongjo; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 92, No. 9, 092115, 14.03.2008.

Research output: Contribution to journalArticle

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