Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes

Myung Hoon Lim, In Yeal Lee, Seong Guk Jeong, Jongtaek Lee, Woo Shik Jung, Hyun Yong Yu, Gil Ho Kim, Yonghan Roh, Jin Hong Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this work, we propose the concept of achieving a lower off-current in organic thin film transistors (OTFTs) by asymmetric source/drain with low and high work-function metals. The artificial hole barrier height (h-BH) at the drain-channel junction formed by this method prevents hole carriers transport from source to drain through the pentacene layer during the off-state. On-current is not affected by this artificially formed h-BH because the effective h-BH is reduced in the on-state. As a result, in the asymmetric Ni-Ti and Ni-Al OTFTs, the off-currents are decreased by 12 and 18.3 times, respectively, compared to that in the symmetric S/D device.

Original languageEnglish
Pages (from-to)1056-1059
Number of pages4
JournalOrganic Electronics
Volume13
Issue number6
DOIs
Publication statusPublished - 2012 Jun

Keywords

  • Asymmetric S/D
  • OTFT
  • Pentacene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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  • Cite this

    Lim, M. H., Lee, I. Y., Jeong, S. G., Lee, J., Jung, W. S., Yu, H. Y., Kim, G. H., Roh, Y., & Park, J. H. (2012). Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes. Organic Electronics, 13(6), 1056-1059. https://doi.org/10.1016/j.orgel.2012.03.009