Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes

Myung Hoon Lim, In Yeal Lee, Seong Guk Jeong, Jongtaek Lee, Woo Shik Jung, Hyun-Yong Yu, Gil Ho Kim, Yonghan Roh, Jin Hong Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this work, we propose the concept of achieving a lower off-current in organic thin film transistors (OTFTs) by asymmetric source/drain with low and high work-function metals. The artificial hole barrier height (h-BH) at the drain-channel junction formed by this method prevents hole carriers transport from source to drain through the pentacene layer during the off-state. On-current is not affected by this artificially formed h-BH because the effective h-BH is reduced in the on-state. As a result, in the asymmetric Ni-Ti and Ni-Al OTFTs, the off-currents are decreased by 12 and 18.3 times, respectively, compared to that in the symmetric S/D device.

Original languageEnglish
Pages (from-to)1056-1059
Number of pages4
JournalOrganic Electronics: physics, materials, applications
Volume13
Issue number6
DOIs
Publication statusPublished - 2012 Jun 1

Fingerprint

Thin film transistors
Leakage currents
leakage
transistors
Electrodes
electrodes
Carrier transport
thin films
Metals
titanium nickelide
pentacene
metals

Keywords

  • Asymmetric S/D
  • OTFT
  • Pentacene

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Chemistry(all)
  • Condensed Matter Physics

Cite this

Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes. / Lim, Myung Hoon; Lee, In Yeal; Jeong, Seong Guk; Lee, Jongtaek; Jung, Woo Shik; Yu, Hyun-Yong; Kim, Gil Ho; Roh, Yonghan; Park, Jin Hong.

In: Organic Electronics: physics, materials, applications, Vol. 13, No. 6, 01.06.2012, p. 1056-1059.

Research output: Contribution to journalArticle

Lim, Myung Hoon ; Lee, In Yeal ; Jeong, Seong Guk ; Lee, Jongtaek ; Jung, Woo Shik ; Yu, Hyun-Yong ; Kim, Gil Ho ; Roh, Yonghan ; Park, Jin Hong. / Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes. In: Organic Electronics: physics, materials, applications. 2012 ; Vol. 13, No. 6. pp. 1056-1059.
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