Less mobility degradation induced by transverse electric-field in junctionless transistors

So Jeong Park, Dae Young Jeon, Laurent Montes, Mireille Mouis, Sylvain Barraud, Gyu-Tae Kim, Gérard Ghibaudo

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Abstract

The mobility degradation by the relaxed electric-field in junctionless transistor (JLT) has been studied experimentally and theoretically. JLT showed less mobility degradation compared to the inversion-mode transistor in both planar-like and nanowire structures. The unique transconductance shape and the reduced degradation of the mobility in the nanowire JLT showed that it still has bulk neutral conduction portion in its total conduction while the immunity to the mobility degradation of JLT is enhanced with planar-structure. 2-dimensional numerical simulation confirmed the reduced transverse electric-field with bulk neutral conduction in JLT as well as the deviation of transconductance degradation by the channel doping concentration and the channel top width.

Original languageEnglish
Article number213504
JournalApplied Physics Letters
Volume105
Issue number21
DOIs
Publication statusPublished - 2014 Nov 24

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Park, S. J., Jeon, D. Y., Montes, L., Mouis, M., Barraud, S., Kim, G-T., & Ghibaudo, G. (2014). Less mobility degradation induced by transverse electric-field in junctionless transistors. Applied Physics Letters, 105(21), [213504]. https://doi.org/10.1063/1.4902549