Lift-off process using bilayer ultraviolet nanoimprint lithography and methacryloxypropyl-terminated-polydimethylsiloxane-based imprint resin

Ho Yong Jung, Seon Yong Hwang, Byeong Ju Bae, Heon Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A high-fidelity lift-off process using bilayer ultraviolet nanoimprint lithography (UV-NIL) to fabricate nanosized metal pattern was demonstrated. High O2 reactive ion etching (RIE) selectivity of the imprinted resist pattern to the underlayer is necessary to create the undercut pattern profile that is essential for the stable lift-off process. A methacryloxypropyl- terminated polydimethylsiloxane (M-PDMS)-based UV-curable liquid-phase imprint resin and a polyvinyl alcohol (PVA) underlayer were applied to bilayer UV-NIL for the high-fidelity lift-off process. The M-PDMS-based imprinted resist pattern showed high etch resistance to O2 plasma and the undercut pattern profile of the PVA underlayer for the lift-off process was formed by the O2 RIE process. The size and shape of the imprinted resist patterns were hardly changed during PVA underlayer etching by O2 RIE. As a result, high-fidelity and high-aspect-ratio metal patterns without rabbit-ear-shaped defects were fabricated by the lift-off process using bilayer UV-NIL with the M-PDMS-based imprint resin, which has high etch resistance to O2 RIE, and the PVA underlayer.

Original languageEnglish
Pages (from-to)1861-1864
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number4
DOIs
Publication statusPublished - 2009 Aug 14

Fingerprint

Nanoimprint lithography
Polydimethylsiloxane
resins
Polyvinyl alcohols
Reactive ion etching
lithography
Resins
polyvinyl alcohol
etching
high resistance
ions
Metals
Aspect ratio
Etching
rabbits
ear
profiles
high aspect ratio
metals
Plasmas

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Lift-off process using bilayer ultraviolet nanoimprint lithography and methacryloxypropyl-terminated-polydimethylsiloxane-based imprint resin",
abstract = "A high-fidelity lift-off process using bilayer ultraviolet nanoimprint lithography (UV-NIL) to fabricate nanosized metal pattern was demonstrated. High O2 reactive ion etching (RIE) selectivity of the imprinted resist pattern to the underlayer is necessary to create the undercut pattern profile that is essential for the stable lift-off process. A methacryloxypropyl- terminated polydimethylsiloxane (M-PDMS)-based UV-curable liquid-phase imprint resin and a polyvinyl alcohol (PVA) underlayer were applied to bilayer UV-NIL for the high-fidelity lift-off process. The M-PDMS-based imprinted resist pattern showed high etch resistance to O2 plasma and the undercut pattern profile of the PVA underlayer for the lift-off process was formed by the O2 RIE process. The size and shape of the imprinted resist patterns were hardly changed during PVA underlayer etching by O2 RIE. As a result, high-fidelity and high-aspect-ratio metal patterns without rabbit-ear-shaped defects were fabricated by the lift-off process using bilayer UV-NIL with the M-PDMS-based imprint resin, which has high etch resistance to O2 RIE, and the PVA underlayer.",
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AB - A high-fidelity lift-off process using bilayer ultraviolet nanoimprint lithography (UV-NIL) to fabricate nanosized metal pattern was demonstrated. High O2 reactive ion etching (RIE) selectivity of the imprinted resist pattern to the underlayer is necessary to create the undercut pattern profile that is essential for the stable lift-off process. A methacryloxypropyl- terminated polydimethylsiloxane (M-PDMS)-based UV-curable liquid-phase imprint resin and a polyvinyl alcohol (PVA) underlayer were applied to bilayer UV-NIL for the high-fidelity lift-off process. The M-PDMS-based imprinted resist pattern showed high etch resistance to O2 plasma and the undercut pattern profile of the PVA underlayer for the lift-off process was formed by the O2 RIE process. The size and shape of the imprinted resist patterns were hardly changed during PVA underlayer etching by O2 RIE. As a result, high-fidelity and high-aspect-ratio metal patterns without rabbit-ear-shaped defects were fabricated by the lift-off process using bilayer UV-NIL with the M-PDMS-based imprint resin, which has high etch resistance to O2 RIE, and the PVA underlayer.

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