Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes

Ikjun Cho, Heeyoung Jung, Byeong Guk Jeong, Donghyo Hahm, Jun Hyuk Chang, Taesoo Lee, Kookheon Char, Doh C. Lee, Jaehoon Lim, Changhee Lee, Jinhan Cho, Wan Ki Bae

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.

Original languageEnglish
Pages (from-to)22453-22459
Number of pages7
JournalACS Applied Materials and Interfaces
Volume10
Issue number26
DOIs
Publication statusPublished - 2018 Jul 5

Fingerprint

Semiconductor quantum dots
Light emitting diodes
Ligands
Charge injection
Electrons
Oleic acid
Oleic Acid
Quantum efficiency
Adhesives

Keywords

  • charge balance
  • hole transport layer engineering
  • interface engineering
  • ligand-asymmetric quantum dot
  • quantum dot-based light-emitting diode

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Cho, I., Jung, H., Jeong, B. G., Hahm, D., Chang, J. H., Lee, T., ... Bae, W. K. (2018). Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes. ACS Applied Materials and Interfaces, 10(26), 22453-22459. https://doi.org/10.1021/acsami.8b08300

Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes. / Cho, Ikjun; Jung, Heeyoung; Jeong, Byeong Guk; Hahm, Donghyo; Chang, Jun Hyuk; Lee, Taesoo; Char, Kookheon; Lee, Doh C.; Lim, Jaehoon; Lee, Changhee; Cho, Jinhan; Bae, Wan Ki.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 26, 05.07.2018, p. 22453-22459.

Research output: Contribution to journalArticle

Cho, I, Jung, H, Jeong, BG, Hahm, D, Chang, JH, Lee, T, Char, K, Lee, DC, Lim, J, Lee, C, Cho, J & Bae, WK 2018, 'Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes', ACS Applied Materials and Interfaces, vol. 10, no. 26, pp. 22453-22459. https://doi.org/10.1021/acsami.8b08300
Cho, Ikjun ; Jung, Heeyoung ; Jeong, Byeong Guk ; Hahm, Donghyo ; Chang, Jun Hyuk ; Lee, Taesoo ; Char, Kookheon ; Lee, Doh C. ; Lim, Jaehoon ; Lee, Changhee ; Cho, Jinhan ; Bae, Wan Ki. / Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 26. pp. 22453-22459.
@article{425d71f7f63c492ca51b25762a89a59e,
title = "Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes",
abstract = "We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23{\%}) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49{\%}). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.",
keywords = "charge balance, hole transport layer engineering, interface engineering, ligand-asymmetric quantum dot, quantum dot-based light-emitting diode",
author = "Ikjun Cho and Heeyoung Jung and Jeong, {Byeong Guk} and Donghyo Hahm and Chang, {Jun Hyuk} and Taesoo Lee and Kookheon Char and Lee, {Doh C.} and Jaehoon Lim and Changhee Lee and Jinhan Cho and Bae, {Wan Ki}",
year = "2018",
month = "7",
day = "5",
doi = "10.1021/acsami.8b08300",
language = "English",
volume = "10",
pages = "22453--22459",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "26",

}

TY - JOUR

T1 - Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes

AU - Cho, Ikjun

AU - Jung, Heeyoung

AU - Jeong, Byeong Guk

AU - Hahm, Donghyo

AU - Chang, Jun Hyuk

AU - Lee, Taesoo

AU - Char, Kookheon

AU - Lee, Doh C.

AU - Lim, Jaehoon

AU - Lee, Changhee

AU - Cho, Jinhan

AU - Bae, Wan Ki

PY - 2018/7/5

Y1 - 2018/7/5

N2 - We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.

AB - We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.

KW - charge balance

KW - hole transport layer engineering

KW - interface engineering

KW - ligand-asymmetric quantum dot

KW - quantum dot-based light-emitting diode

UR - http://www.scopus.com/inward/record.url?scp=85048360376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048360376&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b08300

DO - 10.1021/acsami.8b08300

M3 - Article

VL - 10

SP - 22453

EP - 22459

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 26

ER -