Light-current characteristics of highly p-doped 1.55 μm diffraction-limited high-power laser diodes

Il K. Han, Deok H. Woo, Sun H. Kim, Jung I. Lee, Du Chang Heo, Jichai Jeong, Fred G. Johnson, Si Hyung Cho, Jung H. Song, P. J S Heim, Mario Dagenais

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The variation of the light-current characteristics of diffraction-limited high-power laser diodes is investigated with different p-doping profiles in the two-step separate-confinement heterostructure (SCH) 1.55-μm InGaAs-InP laser structure. A dramatic increase in the optical output power is observed in the structure with high delta doping at the heterointerfaces and moderate doping at the thick SCH layer. In the structure, a continuous-wave output power of about 0.8 W at a temperature of 15 °C was obtained with the nearly diffraction-limited central lobe of the far field. Such an improvement of device performance is attributed to a reduction of the injected carrier overflow into the SCH layer.

Original languageEnglish
Pages (from-to)177-181
Number of pages5
JournalJournal of the Korean Physical Society
Volume38
Issue number3
Publication statusPublished - 2001 Mar 1

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high power lasers
semiconductor lasers
diffraction
output
lobes
continuous radiation
far fields
profiles
lasers
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Han, I. K., Woo, D. H., Kim, S. H., Lee, J. I., Heo, D. C., Jeong, J., ... Dagenais, M. (2001). Light-current characteristics of highly p-doped 1.55 μm diffraction-limited high-power laser diodes. Journal of the Korean Physical Society, 38(3), 177-181.

Light-current characteristics of highly p-doped 1.55 μm diffraction-limited high-power laser diodes. / Han, Il K.; Woo, Deok H.; Kim, Sun H.; Lee, Jung I.; Heo, Du Chang; Jeong, Jichai; Johnson, Fred G.; Cho, Si Hyung; Song, Jung H.; Heim, P. J S; Dagenais, Mario.

In: Journal of the Korean Physical Society, Vol. 38, No. 3, 01.03.2001, p. 177-181.

Research output: Contribution to journalArticle

Han, IK, Woo, DH, Kim, SH, Lee, JI, Heo, DC, Jeong, J, Johnson, FG, Cho, SH, Song, JH, Heim, PJS & Dagenais, M 2001, 'Light-current characteristics of highly p-doped 1.55 μm diffraction-limited high-power laser diodes', Journal of the Korean Physical Society, vol. 38, no. 3, pp. 177-181.
Han, Il K. ; Woo, Deok H. ; Kim, Sun H. ; Lee, Jung I. ; Heo, Du Chang ; Jeong, Jichai ; Johnson, Fred G. ; Cho, Si Hyung ; Song, Jung H. ; Heim, P. J S ; Dagenais, Mario. / Light-current characteristics of highly p-doped 1.55 μm diffraction-limited high-power laser diodes. In: Journal of the Korean Physical Society. 2001 ; Vol. 38, No. 3. pp. 177-181.
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abstract = "The variation of the light-current characteristics of diffraction-limited high-power laser diodes is investigated with different p-doping profiles in the two-step separate-confinement heterostructure (SCH) 1.55-μm InGaAs-InP laser structure. A dramatic increase in the optical output power is observed in the structure with high delta doping at the heterointerfaces and moderate doping at the thick SCH layer. In the structure, a continuous-wave output power of about 0.8 W at a temperature of 15 °C was obtained with the nearly diffraction-limited central lobe of the far field. Such an improvement of device performance is attributed to a reduction of the injected carrier overflow into the SCH layer.",
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AU - Heo, Du Chang

AU - Jeong, Jichai

AU - Johnson, Fred G.

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