Abstract
The variation of the light-current characteristics of diffraction-limited high-power laser diodes is investigated with different p-doping profiles in the two-step separate-confinement heterostructure (SCH) 1.55-μm InGaAs-InP laser structure. A dramatic increase in the optical output power is observed in the structure with high delta doping at the heterointerfaces and moderate doping at the thick SCH layer. In the structure, a continuous-wave output power of about 0.8 W at a temperature of 15 °C was obtained with the nearly diffraction-limited central lobe of the far field. Such an improvement of device performance is attributed to a reduction of the injected carrier overflow into the SCH layer.
| Original language | English |
|---|---|
| Pages (from-to) | 177-181 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 38 |
| Issue number | 3 |
| Publication status | Published - 2001 Mar 1 |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Han, I. K., Woo, D. H., Kim, S. H., Lee, J. I., Heo, D. C., Jeong, J., Johnson, F. G., Cho, S. H., Song, J. H., Heim, P. J. S., & Dagenais, M. (2001). Light-current characteristics of highly p-doped 1.55 μm diffraction-limited high-power laser diodes. Journal of the Korean Physical Society, 38(3), 177-181.