Abstract
The variation of the light-current characteristics of diffraction-limited high-power laser diodes is investigated with different p-doping profiles in the two-step separate-confinement heterostructure (SCH) 1.55-μm InGaAs-InP laser structure. A dramatic increase in the optical output power is observed in the structure with high delta doping at the heterointerfaces and moderate doping at the thick SCH layer. In the structure, a continuous-wave output power of about 0.8 W at a temperature of 15 °C was obtained with the nearly diffraction-limited central lobe of the far field. Such an improvement of device performance is attributed to a reduction of the injected carrier overflow into the SCH layer.
| Original language | English |
|---|---|
| Pages (from-to) | 177-181 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 38 |
| Issue number | 3 |
| Publication status | Published - 2001 Mar 1 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Light-current characteristics of highly p-doped 1.55 μm diffraction-limited high-power laser diodes. / Han, Il K.; Woo, Deok H.; Kim, Sun H.; Lee, Jung I.; Heo, Du Chang; Jeong, Jichai; Johnson, Fred G.; Cho, Si Hyung; Song, Jung H.; Heim, P. J S; Dagenais, Mario.
In: Journal of the Korean Physical Society, Vol. 38, No. 3, 01.03.2001, p. 177-181.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Light-current characteristics of highly p-doped 1.55 μm diffraction-limited high-power laser diodes
AU - Han, Il K.
AU - Woo, Deok H.
AU - Kim, Sun H.
AU - Lee, Jung I.
AU - Heo, Du Chang
AU - Jeong, Jichai
AU - Johnson, Fred G.
AU - Cho, Si Hyung
AU - Song, Jung H.
AU - Heim, P. J S
AU - Dagenais, Mario
PY - 2001/3/1
Y1 - 2001/3/1
N2 - The variation of the light-current characteristics of diffraction-limited high-power laser diodes is investigated with different p-doping profiles in the two-step separate-confinement heterostructure (SCH) 1.55-μm InGaAs-InP laser structure. A dramatic increase in the optical output power is observed in the structure with high delta doping at the heterointerfaces and moderate doping at the thick SCH layer. In the structure, a continuous-wave output power of about 0.8 W at a temperature of 15 °C was obtained with the nearly diffraction-limited central lobe of the far field. Such an improvement of device performance is attributed to a reduction of the injected carrier overflow into the SCH layer.
AB - The variation of the light-current characteristics of diffraction-limited high-power laser diodes is investigated with different p-doping profiles in the two-step separate-confinement heterostructure (SCH) 1.55-μm InGaAs-InP laser structure. A dramatic increase in the optical output power is observed in the structure with high delta doping at the heterointerfaces and moderate doping at the thick SCH layer. In the structure, a continuous-wave output power of about 0.8 W at a temperature of 15 °C was obtained with the nearly diffraction-limited central lobe of the far field. Such an improvement of device performance is attributed to a reduction of the injected carrier overflow into the SCH layer.
UR - http://www.scopus.com/inward/record.url?scp=0035532352&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035532352&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0035532352
VL - 38
SP - 177
EP - 181
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 3
ER -