Abstract
The variation of the light-current characteristics of diffraction-limited high-power laser diodes is investigated with different p-doping profiles in the two-step separate-confinement heterostructure (SCH) 1.55-μm InGaAs-InP laser structure. A dramatic increase in the optical output power is observed in the structure with high delta doping at the heterointerfaces and moderate doping at the thick SCH layer. In the structure, a continuous-wave output power of about 0.8 W at a temperature of 15 °C was obtained with the nearly diffraction-limited central lobe of the far field. Such an improvement of device performance is attributed to a reduction of the injected carrier overflow into the SCH layer.
Original language | English |
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Pages (from-to) | 177-181 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 38 |
Issue number | 3 |
Publication status | Published - 2001 Mar |
ASJC Scopus subject areas
- Physics and Astronomy(all)