Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures

H. Kim, K. K. Choi, K. K. Kim, J. Cho, S. N. Lee, Y. Park, J. S. Kwak, T. Y. Seong

Research output: Contribution to journalArticlepeer-review

65 Citations (Scopus)

Abstract

We report on the fabrication of high-efficiency vertical-injection GaN-based light-emitting diodes (LEDs) fabricated with integrated surface textures. An optical ray-tracing simulation shows that the high integration of surface textures can effectively enhance the light-extraction efficiency. The integrated surface textures are fabricated on the top surface of LEDs by generating hexagonal cones on the periodically corrugated surfaces of Ti-GaN. Compared to reference LEDs without textures, LEDs fabricated with integrated surface textures show an enhancement of the output power by a factor of 2.59, which is in agreement with the calculated results.

Original languageEnglish
Pages (from-to)1273-1275
Number of pages3
JournalOptics Letters
Volume33
Issue number11
DOIs
Publication statusPublished - 2008 Jun 1

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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