Liquid CO2-based coating for dense CuInxGa1−xS2 film fabrication

Eduardus Budi Nursanto, Se Jin Park, Yun Jeong Hwang, Jaehoon Kim, Byoung Koun Min

Research output: Contribution to journalArticle

Abstract

A liquid CO2 (l-CO2)–based coating technique is used for the pore-filling of a porous copper indium gallium sulfide (CuInxGa1−xS2, CIGS) film synthesized by a solution-based method. In the l-CO2–based coating, copper and indium precursors dissolved in l-CO2 are deposited on the porous copper indium gallium oxide film, followed by low-temperature sulfurization. After the high-temperature sulfurization of the deposited film with the l-CO2–based coating, a highly dense CIGS film with almost complete pore-filling is obtained. The use of an indium rich solution in l-CO2 leads to the formation of near stoichiometric ratio of Cu:(In + Ga) that improves the pore filling behavior.

Original languageEnglish
Pages (from-to)453-459
Number of pages7
JournalJournal of Supercritical Fluids
Volume120
DOIs
Publication statusPublished - 2017 Feb 1

Fingerprint

Indium
indium
porosity
coatings
Copper
Fabrication
copper
Coatings
fabrication
Liquids
Gallium
liquids
gallium oxides
indium oxides
gallium
Coating techniques
coating
oxide films
sulfides
Sulfides

Keywords

  • CuInGaS
  • Liquid CO
  • Pore-filling

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry

Cite this

Liquid CO2-based coating for dense CuInxGa1−xS2 film fabrication. / Nursanto, Eduardus Budi; Park, Se Jin; Hwang, Yun Jeong; Kim, Jaehoon; Min, Byoung Koun.

In: Journal of Supercritical Fluids, Vol. 120, 01.02.2017, p. 453-459.

Research output: Contribution to journalArticle

Nursanto, Eduardus Budi ; Park, Se Jin ; Hwang, Yun Jeong ; Kim, Jaehoon ; Min, Byoung Koun. / Liquid CO2-based coating for dense CuInxGa1−xS2 film fabrication. In: Journal of Supercritical Fluids. 2017 ; Vol. 120. pp. 453-459.
@article{171816121f464ed883bc5f4e90cc57c2,
title = "Liquid CO2-based coating for dense CuInxGa1−xS2 film fabrication",
abstract = "A liquid CO2 (l-CO2)–based coating technique is used for the pore-filling of a porous copper indium gallium sulfide (CuInxGa1−xS2, CIGS) film synthesized by a solution-based method. In the l-CO2–based coating, copper and indium precursors dissolved in l-CO2 are deposited on the porous copper indium gallium oxide film, followed by low-temperature sulfurization. After the high-temperature sulfurization of the deposited film with the l-CO2–based coating, a highly dense CIGS film with almost complete pore-filling is obtained. The use of an indium rich solution in l-CO2 leads to the formation of near stoichiometric ratio of Cu:(In + Ga) that improves the pore filling behavior.",
keywords = "CuInGaS, Liquid CO, Pore-filling",
author = "Nursanto, {Eduardus Budi} and Park, {Se Jin} and Hwang, {Yun Jeong} and Jaehoon Kim and Min, {Byoung Koun}",
year = "2017",
month = "2",
day = "1",
doi = "10.1016/j.supflu.2016.05.023",
language = "English",
volume = "120",
pages = "453--459",
journal = "Journal of Supercritical Fluids",
issn = "0896-8446",
publisher = "Elsevier",

}

TY - JOUR

T1 - Liquid CO2-based coating for dense CuInxGa1−xS2 film fabrication

AU - Nursanto, Eduardus Budi

AU - Park, Se Jin

AU - Hwang, Yun Jeong

AU - Kim, Jaehoon

AU - Min, Byoung Koun

PY - 2017/2/1

Y1 - 2017/2/1

N2 - A liquid CO2 (l-CO2)–based coating technique is used for the pore-filling of a porous copper indium gallium sulfide (CuInxGa1−xS2, CIGS) film synthesized by a solution-based method. In the l-CO2–based coating, copper and indium precursors dissolved in l-CO2 are deposited on the porous copper indium gallium oxide film, followed by low-temperature sulfurization. After the high-temperature sulfurization of the deposited film with the l-CO2–based coating, a highly dense CIGS film with almost complete pore-filling is obtained. The use of an indium rich solution in l-CO2 leads to the formation of near stoichiometric ratio of Cu:(In + Ga) that improves the pore filling behavior.

AB - A liquid CO2 (l-CO2)–based coating technique is used for the pore-filling of a porous copper indium gallium sulfide (CuInxGa1−xS2, CIGS) film synthesized by a solution-based method. In the l-CO2–based coating, copper and indium precursors dissolved in l-CO2 are deposited on the porous copper indium gallium oxide film, followed by low-temperature sulfurization. After the high-temperature sulfurization of the deposited film with the l-CO2–based coating, a highly dense CIGS film with almost complete pore-filling is obtained. The use of an indium rich solution in l-CO2 leads to the formation of near stoichiometric ratio of Cu:(In + Ga) that improves the pore filling behavior.

KW - CuInGaS

KW - Liquid CO

KW - Pore-filling

UR - http://www.scopus.com/inward/record.url?scp=85003702294&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003702294&partnerID=8YFLogxK

U2 - 10.1016/j.supflu.2016.05.023

DO - 10.1016/j.supflu.2016.05.023

M3 - Article

VL - 120

SP - 453

EP - 459

JO - Journal of Supercritical Fluids

JF - Journal of Supercritical Fluids

SN - 0896-8446

ER -