Lithographic tuning of photonic-crystal unit-cell resonators with InGaAsGaAs quantum dots emitting at 1.2 μm

Y. S. Choi; S. K. Kim; S. H. Kim; H. G. Park; Y. H. Lee; I. N. Kaiander; F. Hopfer; R. L. Sellin; D. Bimberg

doi:10.1116/1.1852464

Lithographic tuning of photonic-crystal unit-cell resonators with InGaAsGaAs quantum dots emitting at 1.2 μm

Y. S. Choi, S. K. Kim, S. H. Kim, H. G. Park, Y. H. Lee, I. N. Kaiander, F. Hopfer, R. L. Sellin, D. Bimberg

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Modified photonic crystal unit-cell resonators containing self-organized In0.65 Ga0.35 AsGaAs quantum dots are fabricated and characterized. Especially, the tunability of the resonant frequencies as a function of the nearest air holes, the outer air hole, and the lattice constants are investigated in detail by comparing experimental data with three-dimensional finite-difference time-domain calculations. The experimental Q is found to be more than 2000 for a monopole mode and a quadrupole mode.

Original language	English
Pages (from-to)	252-256
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	1
DOIs	https://doi.org/10.1116/1.1852464
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Choi, Y. S., Kim, S. K., Kim, S. H., Park, H. G., Lee, Y. H., Kaiander, I. N., Hopfer, F., Sellin, R. L., & Bimberg, D. (2005). Lithographic tuning of photonic-crystal unit-cell resonators with InGaAsGaAs quantum dots emitting at 1.2 μm. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23(1), 252-256. https://doi.org/10.1116/1.1852464

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title = "Lithographic tuning of photonic-crystal unit-cell resonators with InGaAsGaAs quantum dots emitting at 1.2 μm",

abstract = "Modified photonic crystal unit-cell resonators containing self-organized In0.65 Ga0.35 AsGaAs quantum dots are fabricated and characterized. Especially, the tunability of the resonant frequencies as a function of the nearest air holes, the outer air hole, and the lattice constants are investigated in detail by comparing experimental data with three-dimensional finite-difference time-domain calculations. The experimental Q is found to be more than 2000 for a monopole mode and a quadrupole mode.",

author = "Choi, {Y. S.} and Kim, {S. K.} and Kim, {S. H.} and Park, {H. G.} and Lee, {Y. H.} and Kaiander, {I. N.} and F. Hopfer and Sellin, {R. L.} and D. Bimberg",

note = "Funding Information: This work is supported by Nano Research and Development program of Korea and by the German Federal Ministry of Education and Research (bmb1f).",

year = "2005",

doi = "10.1116/1.1852464",

language = "English",

volume = "23",

pages = "252--256",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "1",

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TY - JOUR

T1 - Lithographic tuning of photonic-crystal unit-cell resonators with InGaAsGaAs quantum dots emitting at 1.2 μm

AU - Choi, Y. S.

AU - Kim, S. K.

AU - Kim, S. H.

AU - Park, H. G.

AU - Lee, Y. H.

AU - Kaiander, I. N.

AU - Hopfer, F.

AU - Sellin, R. L.

AU - Bimberg, D.

N1 - Funding Information: This work is supported by Nano Research and Development program of Korea and by the German Federal Ministry of Education and Research (bmb1f).

PY - 2005

Y1 - 2005

N2 - Modified photonic crystal unit-cell resonators containing self-organized In0.65 Ga0.35 AsGaAs quantum dots are fabricated and characterized. Especially, the tunability of the resonant frequencies as a function of the nearest air holes, the outer air hole, and the lattice constants are investigated in detail by comparing experimental data with three-dimensional finite-difference time-domain calculations. The experimental Q is found to be more than 2000 for a monopole mode and a quadrupole mode.

AB - Modified photonic crystal unit-cell resonators containing self-organized In0.65 Ga0.35 AsGaAs quantum dots are fabricated and characterized. Especially, the tunability of the resonant frequencies as a function of the nearest air holes, the outer air hole, and the lattice constants are investigated in detail by comparing experimental data with three-dimensional finite-difference time-domain calculations. The experimental Q is found to be more than 2000 for a monopole mode and a quadrupole mode.

UR - http://www.scopus.com/inward/record.url?scp=31144444725&partnerID=8YFLogxK

U2 - 10.1116/1.1852464

DO - 10.1116/1.1852464

M3 - Article

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SN - 1071-1023

VL - 23

SP - 252

EP - 256

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Lithographic tuning of photonic-crystal unit-cell resonators with InGaAsGaAs quantum dots emitting at 1.2 μm

Abstract

ASJC Scopus subject areas

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