Lithographic tuning of photonic-crystal unit-cell resonators with InGaAsGaAs quantum dots emitting at 1.2 μm

Y. S. Choi, S. K. Kim, S. H. Kim, H. G. Park, Y. H. Lee, I. N. Kaiander, F. Hopfer, R. L. Sellin, D. Bimberg

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Modified photonic crystal unit-cell resonators containing self-organized In0.65 Ga0.35 AsGaAs quantum dots are fabricated and characterized. Especially, the tunability of the resonant frequencies as a function of the nearest air holes, the outer air hole, and the lattice constants are investigated in detail by comparing experimental data with three-dimensional finite-difference time-domain calculations. The experimental Q is found to be more than 2000 for a monopole mode and a quadrupole mode.

Original languageEnglish
Pages (from-to)252-256
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number1
DOIs
Publication statusPublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Lithographic tuning of photonic-crystal unit-cell resonators with InGaAsGaAs quantum dots emitting at 1.2 μm'. Together they form a unique fingerprint.

  • Cite this