TY - JOUR
T1 - Lithography-free fabrication of field effect transistor channels with randomly contact-printed black phosphorus flakes
AU - Yoo, Seolhee
AU - Kim, Sangsig
AU - Song, Yong Won
N1 - Funding Information:
This work was supported by the National Research Foundation (NRF), funded by the Ministry of Science, ICT and Future Planning, South Korea (Grant No. NRF-2015R1A2A2A04006979). Also supported by the Institutional Program (2E28200) funded by the Korea Institute of Science and Technology (KIST), South Korea.
Funding Information:
This work was supported by the National Research Foundation (NRF), funded by the Ministry of Science, ICT and Future Planning, South Korea (Grant No. NRF-2015R1A2A2A04006979 ). Also supported by the Institutional Program ( 2E28200 ) funded by the Korea Institute of Science and Technology (KIST), South Korea.
Publisher Copyright:
© 2018 Elsevier Ltd
PY - 2018/11/1
Y1 - 2018/11/1
N2 - Black phosphorus (BP) has distinctive properties of tunable direct band gap as a semiconductor material, and both high carrier mobility and on/off switching performance for electronic devices, but has a significant drawback of material degradation in ambient atmosphere. Also, unlike graphene or MoS2, BP is only synthesized in bulk shapes limiting the fabrication of thin film-based devices. We demonstrated a contact printing process for BP field effect transistors (FET) with the steps of mechanical exfoliation of BP flakes and their randomized stamping in dry-transfer regime. The contact printing featured by fast, continuous and solvent-free process on the pre-patterned electrodes guarantees high process efficiency providing immunity against the chemical degradation of BP layers. With asymmetric I-V characteristics, the resultant BP-channelized FET shows the electrical properties of on/off current ratio, hole mobility, and subthreshold swing as > 102, ~ 130 cm2/Vs, and ~ 4.6 V/dec, respectively.
AB - Black phosphorus (BP) has distinctive properties of tunable direct band gap as a semiconductor material, and both high carrier mobility and on/off switching performance for electronic devices, but has a significant drawback of material degradation in ambient atmosphere. Also, unlike graphene or MoS2, BP is only synthesized in bulk shapes limiting the fabrication of thin film-based devices. We demonstrated a contact printing process for BP field effect transistors (FET) with the steps of mechanical exfoliation of BP flakes and their randomized stamping in dry-transfer regime. The contact printing featured by fast, continuous and solvent-free process on the pre-patterned electrodes guarantees high process efficiency providing immunity against the chemical degradation of BP layers. With asymmetric I-V characteristics, the resultant BP-channelized FET shows the electrical properties of on/off current ratio, hole mobility, and subthreshold swing as > 102, ~ 130 cm2/Vs, and ~ 4.6 V/dec, respectively.
KW - Black phosphorus
KW - Contact printing
KW - Field effect transistor
KW - Lithography-free
UR - http://www.scopus.com/inward/record.url?scp=85048964030&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2018.06.010
DO - 10.1016/j.mssp.2018.06.010
M3 - Article
AN - SCOPUS:85048964030
VL - 86
SP - 58
EP - 62
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -