Local doping of graphene devices by selective hydrogen adsorption

Min Park, Yong Ju Yun, Minwoo Lee, Dae Hong Jeong, Yongseok Jun, Yung Woo Park, Byung Hoon Kim

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10 Citations (Scopus)

Abstract

N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, herein, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K. A graphene field effect transistor was produced covered with PMMA on half of the graphene region. The charge neutrality point of the PMMA-window region shifted to a negative gate voltage (VG) region prominently compared with that of the PMMA-covered region. Consequently, a single graphene p-n junction was obtained by measuring the VG-dependent resistance of the whole graphene region. This method presents opportunities for developing and controlling the electronic structure of graphene and device applications.

Original languageEnglish
Article number017120
JournalAIP Advances
Volume5
Issue number1
DOIs
Publication statusPublished - 2015 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Park, M., Yun, Y. J., Lee, M., Jeong, D. H., Jun, Y., Park, Y. W., & Kim, B. H. (2015). Local doping of graphene devices by selective hydrogen adsorption. AIP Advances, 5(1), [017120]. https://doi.org/10.1063/1.4906254