Local electronic density of states of a semiconducting carbon nanotube interface

Hajin Kim, Jhinhwan Lee, Sungjun Lee, Young Kuk, Ji Yong Park, Se-Jong Kahng

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The local electronic structure of semiconducting single-wall carbon nanotubes was studied with scanning tunneling microscopy. We performed scanning tunneling spectroscopy measurement at selected locations on the center axis of carbon nanotubes, acquiring a map of the electronic density of states. Spatial oscillation was observed in the electronic density of states with the period of atomic lattice. Defect induced interface states were found at the junctions of the two semiconducting nanotubes, which are well-understood in analogy with the interface states of bulk semiconductor heterostructures. The electronic leak of the van Hove singularity peaks was observed across the junction, due to inefficient charge screening in a one-dimensional structure.

Original languageEnglish
Article number235402
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number23
DOIs
Publication statusPublished - 2005 Jun 15

Fingerprint

Carbon Nanotubes
Electronic density of states
Interface states
Carbon nanotubes
carbon nanotubes
Scanning tunneling microscopy
electronics
Crystal lattices
Nanotubes
Electronic structure
Heterojunctions
Screening
Spectroscopy
Semiconductor materials
Scanning
trucks
Defects
scanning tunneling microscopy
nanotubes
screening

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Local electronic density of states of a semiconducting carbon nanotube interface. / Kim, Hajin; Lee, Jhinhwan; Lee, Sungjun; Kuk, Young; Park, Ji Yong; Kahng, Se-Jong.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 71, No. 23, 235402, 15.06.2005.

Research output: Contribution to journalArticle

Kim, Hajin ; Lee, Jhinhwan ; Lee, Sungjun ; Kuk, Young ; Park, Ji Yong ; Kahng, Se-Jong. / Local electronic density of states of a semiconducting carbon nanotube interface. In: Physical Review B - Condensed Matter and Materials Physics. 2005 ; Vol. 71, No. 23.
@article{71e9555fb18f4615bcb903e9e075eaa3,
title = "Local electronic density of states of a semiconducting carbon nanotube interface",
abstract = "The local electronic structure of semiconducting single-wall carbon nanotubes was studied with scanning tunneling microscopy. We performed scanning tunneling spectroscopy measurement at selected locations on the center axis of carbon nanotubes, acquiring a map of the electronic density of states. Spatial oscillation was observed in the electronic density of states with the period of atomic lattice. Defect induced interface states were found at the junctions of the two semiconducting nanotubes, which are well-understood in analogy with the interface states of bulk semiconductor heterostructures. The electronic leak of the van Hove singularity peaks was observed across the junction, due to inefficient charge screening in a one-dimensional structure.",
author = "Hajin Kim and Jhinhwan Lee and Sungjun Lee and Young Kuk and Park, {Ji Yong} and Se-Jong Kahng",
year = "2005",
month = "6",
day = "15",
doi = "10.1103/PhysRevB.71.235402",
language = "English",
volume = "71",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - Local electronic density of states of a semiconducting carbon nanotube interface

AU - Kim, Hajin

AU - Lee, Jhinhwan

AU - Lee, Sungjun

AU - Kuk, Young

AU - Park, Ji Yong

AU - Kahng, Se-Jong

PY - 2005/6/15

Y1 - 2005/6/15

N2 - The local electronic structure of semiconducting single-wall carbon nanotubes was studied with scanning tunneling microscopy. We performed scanning tunneling spectroscopy measurement at selected locations on the center axis of carbon nanotubes, acquiring a map of the electronic density of states. Spatial oscillation was observed in the electronic density of states with the period of atomic lattice. Defect induced interface states were found at the junctions of the two semiconducting nanotubes, which are well-understood in analogy with the interface states of bulk semiconductor heterostructures. The electronic leak of the van Hove singularity peaks was observed across the junction, due to inefficient charge screening in a one-dimensional structure.

AB - The local electronic structure of semiconducting single-wall carbon nanotubes was studied with scanning tunneling microscopy. We performed scanning tunneling spectroscopy measurement at selected locations on the center axis of carbon nanotubes, acquiring a map of the electronic density of states. Spatial oscillation was observed in the electronic density of states with the period of atomic lattice. Defect induced interface states were found at the junctions of the two semiconducting nanotubes, which are well-understood in analogy with the interface states of bulk semiconductor heterostructures. The electronic leak of the van Hove singularity peaks was observed across the junction, due to inefficient charge screening in a one-dimensional structure.

UR - http://www.scopus.com/inward/record.url?scp=28344450475&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28344450475&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.71.235402

DO - 10.1103/PhysRevB.71.235402

M3 - Article

AN - SCOPUS:28344450475

VL - 71

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 23

M1 - 235402

ER -