Local Hall effect in hybrid ferromagnetic/semiconductor devices

Jinki Hong; Sungjung Joo; Tae Suk Kim; Kungwon Rhie; K. H. Kim; S. U. Kim; B. C. Lee; Kyung Ho Shin

doi:10.1063/1.2416000

Local Hall effect in hybrid ferromagnetic/semiconductor devices

Jinki Hong, Sungjung Joo, Tae Suk Kim, Kungwon Rhie, K. H. Kim, S. U. Kim, B. C. Lee, Kyung Ho Shin

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

The authors have investigated the magnetoresistance of ferromagnet- semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, they confirmed that their data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.

Original language	English
Article number	023510
Journal	Applied Physics Letters
Volume	90
Issue number	2
DOIs	https://doi.org/10.1063/1.2416000
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2416000

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title = "Local Hall effect in hybrid ferromagnetic/semiconductor devices",

abstract = "The authors have investigated the magnetoresistance of ferromagnet- semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, they confirmed that their data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.",

author = "Jinki Hong and Sungjung Joo and Kim, {Tae Suk} and Kungwon Rhie and Kim, {K. H.} and Kim, {S. U.} and Lee, {B. C.} and Shin, {Kyung Ho}",

note = "Funding Information: This work was supported by the VISON21 program at Korea Institute of Science and Technology, the SRC/ERC program of MOST/KOSEF (R11-2000-071), and the Basic Research Program of KOSEF (R01-2006-000-11391-0 and R01-2005-000-10303-0).",

year = "2007",

doi = "10.1063/1.2416000",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

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T1 - Local Hall effect in hybrid ferromagnetic/semiconductor devices

AU - Hong, Jinki

AU - Joo, Sungjung

AU - Kim, Tae Suk

AU - Rhie, Kungwon

AU - Kim, K. H.

AU - Kim, S. U.

AU - Lee, B. C.

AU - Shin, Kyung Ho

N1 - Funding Information: This work was supported by the VISON21 program at Korea Institute of Science and Technology, the SRC/ERC program of MOST/KOSEF (R11-2000-071), and the Basic Research Program of KOSEF (R01-2006-000-11391-0 and R01-2005-000-10303-0).

PY - 2007

Y1 - 2007

N2 - The authors have investigated the magnetoresistance of ferromagnet- semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, they confirmed that their data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.

AB - The authors have investigated the magnetoresistance of ferromagnet- semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, they confirmed that their data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.

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U2 - 10.1063/1.2416000

DO - 10.1063/1.2416000

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VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

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Local Hall effect in hybrid ferromagnetic/semiconductor devices

Abstract

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