Local Hall effect in hybrid ferromagnetic/semiconductor devices

Jinki Hong, Sungjung Joo, Tae Suk Kim, Kungwon Rhie, Kihyun Kim, S. U. Kim, B. C. Lee, Kyung Ho Shin

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The authors have investigated the magnetoresistance of ferromagnet- semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, they confirmed that their data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.

Original languageEnglish
Article number023510
JournalApplied Physics Letters
Volume90
Issue number2
DOIs
Publication statusPublished - 2007 Jan 22

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semiconductor devices
Hall effect
profiles
magnetic fields
ballistics
numerical analysis
electron gas

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hong, J., Joo, S., Kim, T. S., Rhie, K., Kim, K., Kim, S. U., ... Shin, K. H. (2007). Local Hall effect in hybrid ferromagnetic/semiconductor devices. Applied Physics Letters, 90(2), [023510]. https://doi.org/10.1063/1.2416000

Local Hall effect in hybrid ferromagnetic/semiconductor devices. / Hong, Jinki; Joo, Sungjung; Kim, Tae Suk; Rhie, Kungwon; Kim, Kihyun; Kim, S. U.; Lee, B. C.; Shin, Kyung Ho.

In: Applied Physics Letters, Vol. 90, No. 2, 023510, 22.01.2007.

Research output: Contribution to journalArticle

Hong, J, Joo, S, Kim, TS, Rhie, K, Kim, K, Kim, SU, Lee, BC & Shin, KH 2007, 'Local Hall effect in hybrid ferromagnetic/semiconductor devices', Applied Physics Letters, vol. 90, no. 2, 023510. https://doi.org/10.1063/1.2416000
Hong, Jinki ; Joo, Sungjung ; Kim, Tae Suk ; Rhie, Kungwon ; Kim, Kihyun ; Kim, S. U. ; Lee, B. C. ; Shin, Kyung Ho. / Local Hall effect in hybrid ferromagnetic/semiconductor devices. In: Applied Physics Letters. 2007 ; Vol. 90, No. 2.
@article{d2d6bfafb2b44bc1b29561c91325ec77,
title = "Local Hall effect in hybrid ferromagnetic/semiconductor devices",
abstract = "The authors have investigated the magnetoresistance of ferromagnet- semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, they confirmed that their data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.",
author = "Jinki Hong and Sungjung Joo and Kim, {Tae Suk} and Kungwon Rhie and Kihyun Kim and Kim, {S. U.} and Lee, {B. C.} and Shin, {Kyung Ho}",
year = "2007",
month = "1",
day = "22",
doi = "10.1063/1.2416000",
language = "English",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Local Hall effect in hybrid ferromagnetic/semiconductor devices

AU - Hong, Jinki

AU - Joo, Sungjung

AU - Kim, Tae Suk

AU - Rhie, Kungwon

AU - Kim, Kihyun

AU - Kim, S. U.

AU - Lee, B. C.

AU - Shin, Kyung Ho

PY - 2007/1/22

Y1 - 2007/1/22

N2 - The authors have investigated the magnetoresistance of ferromagnet- semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, they confirmed that their data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.

AB - The authors have investigated the magnetoresistance of ferromagnet- semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, they confirmed that their data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.

UR - http://www.scopus.com/inward/record.url?scp=33846189314&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846189314&partnerID=8YFLogxK

U2 - 10.1063/1.2416000

DO - 10.1063/1.2416000

M3 - Article

AN - SCOPUS:33846189314

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 023510

ER -