Local Hall effect in hybrid ferromagnetic/semiconductor devices

Jinki Hong, Sungjung Joo, Tae Suk Kim, Kungwon Rhie, K. H. Kim, S. U. Kim, B. C. Lee, Kyung Ho Shin

Research output: Contribution to journalArticlepeer-review

37 Citations (Scopus)


The authors have investigated the magnetoresistance of ferromagnet- semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of their device is large. The longitudinal resistance has an additional contribution which is odd in applied magnetic field. It becomes even negative at low temperature where the transport is ballistic. Based on the numerical analysis, they confirmed that their data can be explained in terms of the local Hall effect due to the profile of negative and positive field regions. This device may be useful for future spintronic applications.

Original languageEnglish
Article number023510
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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