Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles

Lee Woon Jang, Dae Woo Jeon, Trilochan Sahoo, Dong Seob Jo, Jin Woo Ju, Seung Jae Lee, Jong Hyeob Baek, Jin Kyu Yang, Jung Hoon Song, Alexander Y. Polyakov, In Hwan Lee

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36 Citations (Scopus)

Abstract

Optical properties of InGaN/GaN multi-quantum-well (MQW) structures with a nanolayer of Ag/SiO2 nanoparticle (NP) on top were studied. Modeling and optical absorption (OA) measurements prove that the NPs form localized surface plasmons (LSP) structure with a broad OA band peaked near 440-460 nm and the fringe electric field extending down to about 10 nm into the GaN layer. The presence of this NP LSP electrical field increases the photoluminescence (PL) intensity of the MQW structure by about 70% and markedly decreases the time-resolved PL (TRPL) relaxation time due to the strong coupling of MQW emission to the LSP mode.

Original languageEnglish
Pages (from-to)2116-2123
Number of pages8
JournalOptics Express
Volume20
Issue number3
DOIs
Publication statusPublished - 2012 Jan 30
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Jang, L. W., Jeon, D. W., Sahoo, T., Jo, D. S., Ju, J. W., Lee, S. J., Baek, J. H., Yang, J. K., Song, J. H., Polyakov, A. Y., & Lee, I. H. (2012). Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles. Optics Express, 20(3), 2116-2123. https://doi.org/10.1364/OE.20.002116