Long-Term reliability of Si-Si0.7Ge0.3-Si HBTs from accelerated lifetime testing

Zhengqiang Ma, Jae-Sung Rieh, Pallab Bhattacharya, Samuel A. Alterovitz, George E. Ponchak, Edward T. Croke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Accelerated lifetime tests were performed on double-mesa structure Si-Si0.7Ge0.3-Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175°C-275°C. The transistors (with 5×20 μm2 emitter area) have DC current gains ∼40-50 and fT and fmax of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-Type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained to the first order of approximation, and the agreement with measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35×104 A/cm2 current density operation is estimated from extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-Term reliability of the devices and circuits made with them.

Original languageEnglish
Title of host publication2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages122-130
Number of pages9
ISBN (Print)0780371291, 9780780371293
DOIs
Publication statusPublished - 2001
Externally publishedYes
Event3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 - Ann Arbor, United States
Duration: 2001 Sep 14 → …

Other

Other3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
CountryUnited States
CityAnn Arbor
Period01/9/14 → …

Fingerprint

Heterojunction bipolar transistors
Testing
Impurities
Arrhenius plots
Energy barriers
Extrapolation
Molecular beam epitaxy
Temperature
Boron
Heterojunctions
Transistors
Current density
Feedback
Degradation
Atoms
Networks (circuits)

Keywords

  • Circuit testing
  • Degradation
  • Heterojunction bipolar transistors
  • Impurities
  • Life estimation
  • Lifetime estimation
  • Molecular beam epitaxial growth
  • Performance evaluation
  • Spontaneous emission
  • Temperature distribution

ASJC Scopus subject areas

  • Computer Science(all)

Cite this

Ma, Z., Rieh, J-S., Bhattacharya, P., Alterovitz, S. A., Ponchak, G. E., & Croke, E. T. (2001). Long-Term reliability of Si-Si0.7Ge0.3-Si HBTs from accelerated lifetime testing. In 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 (pp. 122-130). [942352] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.2001.942352

Long-Term reliability of Si-Si0.7Ge0.3-Si HBTs from accelerated lifetime testing. / Ma, Zhengqiang; Rieh, Jae-Sung; Bhattacharya, Pallab; Alterovitz, Samuel A.; Ponchak, George E.; Croke, Edward T.

2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 122-130 942352.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ma, Z, Rieh, J-S, Bhattacharya, P, Alterovitz, SA, Ponchak, GE & Croke, ET 2001, Long-Term reliability of Si-Si0.7Ge0.3-Si HBTs from accelerated lifetime testing. in 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001., 942352, Institute of Electrical and Electronics Engineers Inc., pp. 122-130, 3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001, Ann Arbor, United States, 01/9/14. https://doi.org/10.1109/SMIC.2001.942352
Ma Z, Rieh J-S, Bhattacharya P, Alterovitz SA, Ponchak GE, Croke ET. Long-Term reliability of Si-Si0.7Ge0.3-Si HBTs from accelerated lifetime testing. In 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 122-130. 942352 https://doi.org/10.1109/SMIC.2001.942352
Ma, Zhengqiang ; Rieh, Jae-Sung ; Bhattacharya, Pallab ; Alterovitz, Samuel A. ; Ponchak, George E. ; Croke, Edward T. / Long-Term reliability of Si-Si0.7Ge0.3-Si HBTs from accelerated lifetime testing. 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 122-130
@inproceedings{2dad652d132648fcb74ff1f228646932,
title = "Long-Term reliability of Si-Si0.7Ge0.3-Si HBTs from accelerated lifetime testing",
abstract = "Accelerated lifetime tests were performed on double-mesa structure Si-Si0.7Ge0.3-Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175°C-275°C. The transistors (with 5×20 μm2 emitter area) have DC current gains ∼40-50 and fT and fmax of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-Type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained to the first order of approximation, and the agreement with measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35×104 A/cm2 current density operation is estimated from extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-Term reliability of the devices and circuits made with them.",
keywords = "Circuit testing, Degradation, Heterojunction bipolar transistors, Impurities, Life estimation, Lifetime estimation, Molecular beam epitaxial growth, Performance evaluation, Spontaneous emission, Temperature distribution",
author = "Zhengqiang Ma and Jae-Sung Rieh and Pallab Bhattacharya and Alterovitz, {Samuel A.} and Ponchak, {George E.} and Croke, {Edward T.}",
year = "2001",
doi = "10.1109/SMIC.2001.942352",
language = "English",
isbn = "0780371291",
pages = "122--130",
booktitle = "2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Long-Term reliability of Si-Si0.7Ge0.3-Si HBTs from accelerated lifetime testing

AU - Ma, Zhengqiang

AU - Rieh, Jae-Sung

AU - Bhattacharya, Pallab

AU - Alterovitz, Samuel A.

AU - Ponchak, George E.

AU - Croke, Edward T.

PY - 2001

Y1 - 2001

N2 - Accelerated lifetime tests were performed on double-mesa structure Si-Si0.7Ge0.3-Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175°C-275°C. The transistors (with 5×20 μm2 emitter area) have DC current gains ∼40-50 and fT and fmax of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-Type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained to the first order of approximation, and the agreement with measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35×104 A/cm2 current density operation is estimated from extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-Term reliability of the devices and circuits made with them.

AB - Accelerated lifetime tests were performed on double-mesa structure Si-Si0.7Ge0.3-Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175°C-275°C. The transistors (with 5×20 μm2 emitter area) have DC current gains ∼40-50 and fT and fmax of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-Type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained to the first order of approximation, and the agreement with measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35×104 A/cm2 current density operation is estimated from extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-Term reliability of the devices and circuits made with them.

KW - Circuit testing

KW - Degradation

KW - Heterojunction bipolar transistors

KW - Impurities

KW - Life estimation

KW - Lifetime estimation

KW - Molecular beam epitaxial growth

KW - Performance evaluation

KW - Spontaneous emission

KW - Temperature distribution

UR - http://www.scopus.com/inward/record.url?scp=84952002537&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84952002537&partnerID=8YFLogxK

U2 - 10.1109/SMIC.2001.942352

DO - 10.1109/SMIC.2001.942352

M3 - Conference contribution

SN - 0780371291

SN - 9780780371293

SP - 122

EP - 130

BT - 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001

PB - Institute of Electrical and Electronics Engineers Inc.

ER -