Long-Term reliability of Si-Si0.7Ge0.3-Si HBTs from accelerated lifetime testing

Zhengqiang Ma, Jae-Sung Rieh, Pallab Bhattacharya, Samuel A. Alterovitz, George E. Ponchak, Edward T. Croke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Accelerated lifetime tests were performed on double-mesa structure Si-Si0.7Ge0.3-Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175°C-275°C. The transistors (with 5×20 μm2 emitter area) have DC current gains ∼40-50 and fT and fmax of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-Type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained to the first order of approximation, and the agreement with measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35×104 A/cm2 current density operation is estimated from extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-Term reliability of the devices and circuits made with them.

Original languageEnglish
Title of host publication2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages122-130
Number of pages9
ISBN (Print)0780371291, 9780780371293
DOIs
Publication statusPublished - 2001
Externally publishedYes
Event3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 - Ann Arbor, United States
Duration: 2001 Sep 14 → …

Other

Other3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
CountryUnited States
CityAnn Arbor
Period01/9/14 → …

Keywords

  • Circuit testing
  • Degradation
  • Heterojunction bipolar transistors
  • Impurities
  • Life estimation
  • Lifetime estimation
  • Molecular beam epitaxial growth
  • Performance evaluation
  • Spontaneous emission
  • Temperature distribution

ASJC Scopus subject areas

  • Computer Science(all)

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  • Cite this

    Ma, Z., Rieh, J-S., Bhattacharya, P., Alterovitz, S. A., Ponchak, G. E., & Croke, E. T. (2001). Long-Term reliability of Si-Si0.7Ge0.3-Si HBTs from accelerated lifetime testing. In 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 (pp. 122-130). [942352] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.2001.942352