Abstract
We have fabricated hybrid ferromagnet-semiconductor devices which have magnetic barriers in a form of the serial junctions of positive and negative magnetic-field regions. These magnetic barriers are controlled by a magnetization of micromagnets on the surface of the device. The large variation of longitudinal resistance as a function of the magnitude of magnetic barriers has been observed, and its functional form is similar to Hall resistance. At low temperature the measured longitudinal resistance of our device shows negative value. This device can be a good candidate for spintronic devices using spin up/down junction.
| Original language | English |
|---|---|
| Pages (from-to) | e652-e654 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 310 |
| Issue number | 2 SUPPL. PART 3 |
| DOIs | |
| Publication status | Published - 2007 Mar |
Keywords
- Hall effect
- InAs
- Magnetoresistance
- Micromagnet
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Joo, S., Hong, J., Rhie, K., Jung, K. Y., Kim, K. H., Kim, S. U., Yie, H., Shin, K., & Lee, B. C. (2007). Longitudinal resistance on a serial magnetic barrier device. Journal of Magnetism and Magnetic Materials, 310(2 SUPPL. PART 3), e652-e654. https://doi.org/10.1016/j.jmmm.2006.10.824