Abstract
We have fabricated hybrid ferromagnet-semiconductor devices which have magnetic barriers in a form of the serial junctions of positive and negative magnetic-field regions. These magnetic barriers are controlled by a magnetization of micromagnets on the surface of the device. The large variation of longitudinal resistance as a function of the magnitude of magnetic barriers has been observed, and its functional form is similar to Hall resistance. At low temperature the measured longitudinal resistance of our device shows negative value. This device can be a good candidate for spintronic devices using spin up/down junction.
| Original language | English |
|---|---|
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 310 |
| Issue number | 2 SUPPL. PART 3 |
| DOIs | |
| Publication status | Published - 2007 Mar 1 |
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Keywords
- Hall effect
- InAs
- Magnetoresistance
- Micromagnet
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Longitudinal resistance on a serial magnetic barrier device. / Joo, S.; Hong, J.; Rhie, K.; Jung, K. Y.; Kim, Kihyun; Kim, S. U.; Yie, H.; Shin, K.; Lee, B. C.
In: Journal of Magnetism and Magnetic Materials, Vol. 310, No. 2 SUPPL. PART 3, 01.03.2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Longitudinal resistance on a serial magnetic barrier device
AU - Joo, S.
AU - Hong, J.
AU - Rhie, K.
AU - Jung, K. Y.
AU - Kim, Kihyun
AU - Kim, S. U.
AU - Yie, H.
AU - Shin, K.
AU - Lee, B. C.
PY - 2007/3/1
Y1 - 2007/3/1
N2 - We have fabricated hybrid ferromagnet-semiconductor devices which have magnetic barriers in a form of the serial junctions of positive and negative magnetic-field regions. These magnetic barriers are controlled by a magnetization of micromagnets on the surface of the device. The large variation of longitudinal resistance as a function of the magnitude of magnetic barriers has been observed, and its functional form is similar to Hall resistance. At low temperature the measured longitudinal resistance of our device shows negative value. This device can be a good candidate for spintronic devices using spin up/down junction.
AB - We have fabricated hybrid ferromagnet-semiconductor devices which have magnetic barriers in a form of the serial junctions of positive and negative magnetic-field regions. These magnetic barriers are controlled by a magnetization of micromagnets on the surface of the device. The large variation of longitudinal resistance as a function of the magnitude of magnetic barriers has been observed, and its functional form is similar to Hall resistance. At low temperature the measured longitudinal resistance of our device shows negative value. This device can be a good candidate for spintronic devices using spin up/down junction.
KW - Hall effect
KW - InAs
KW - Magnetoresistance
KW - Micromagnet
UR - http://www.scopus.com/inward/record.url?scp=33847628752&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33847628752&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2006.10.824
DO - 10.1016/j.jmmm.2006.10.824
M3 - Article
AN - SCOPUS:33847628752
VL - 310
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - 2 SUPPL. PART 3
ER -