Low cost ternary content addressable memory based on early termination precharge scheme

Kyeongho Lee, Geon Ko, Jongsun Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, we present early termination match-line (ML) precharge scheme for low power and high speed ternary content addressable memory (TCAM). In the proposed TCAM, by employing the pre-decision based early termination, unnecessary ML precharging has been effectively eliminated while improving the search speed and achieving error-free operation. The reference voltage generator used to implement the proposed early termination approach can be simply designed using dummy row without large area overhead. According to the post-layout simulations with the 65nm CMOS process, the proposed early termination ML precharge scheme shows up to 30.4% of sensing delay improvement and 65.9% of ML power savings compared to the conventional approach. It also shows 8% of FOM (energy/bit/search) improvement compared to state-of-the-art works.

Original languageEnglish
Title of host publication2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728103976
DOIs
Publication statusPublished - 2019 Jan 1
Event2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Sapporo, Japan
Duration: 2019 May 262019 May 29

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2019-May
ISSN (Print)0271-4310

Conference

Conference2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019
CountryJapan
CitySapporo
Period19/5/2619/5/29

Keywords

  • CAM
  • Content addressable memory
  • Early termination precharge
  • Memory
  • Reference voltage
  • Sensing margin
  • TCAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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