Low Cost Ternary Content Addressable Memory Using Adaptive Matchline Discharging Scheme

Woong Choi, Kyeongho Lee, Jongsun Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

This paper presents an adaptive match-line (ML) discharging scheme for low power and high speed ternary content addressable memory (TCAM). In the proposed TCAM, by employing the gated ML pulldown path and ML boosting scheme, the redundant ML discharging and SL switching are eliminated while improving the search speed. By considering the number of mismatch and ML discharging speed, the ML discharging is adaptively controlled in the proposed TCAM. The simulation results with the 65nm CMOS technology show that the proposed adaptive ML discharging scheme improves up to 19% of sensing delay and saves 81% of ML power compared to the conventional approach. When compared with the state-of-the-art work, the post-layout simulations show 10% improvement of FOM (energy/bit/search).

Original languageEnglish
Title of host publication2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538648810
DOIs
Publication statusPublished - 2018 Apr 26
Event2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Florence, Italy
Duration: 2018 May 272018 May 30

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2018-May
ISSN (Print)0271-4310

Other

Other2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018
Country/TerritoryItaly
CityFlorence
Period18/5/2718/5/30

Keywords

  • CAM
  • TCAM
  • adaptive sensing
  • content addressable memory
  • memory
  • reference voltage
  • sensing margin

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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