Low dark current schottky metal-semiconductor-metal photodetectors fabricated on AlGaN epitaxial layers for visible-blind ultraviolet detection

Research output: Contribution to journalConference article

10 Citations (Scopus)
Original languageEnglish
JournalPhysica Status Solidi (A) Applied Research
Volume192
Issue number1
DOIs
Publication statusPublished - 2002 Jul 1
Externally publishedYes
Event4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain
Duration: 2002 Mar 112002 Mar 15

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Dark currents
Epitaxial layers
Photodetectors
Metals
Semiconductor materials
aluminum gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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title = "Low dark current schottky metal-semiconductor-metal photodetectors fabricated on AlGaN epitaxial layers for visible-blind ultraviolet detection",
author = "In-Hwan Lee",
year = "2002",
month = "7",
day = "1",
doi = "10.1002/1521-396X(200207)192:1<R4::AID-PSSA99994>3.0.CO;2-N",
language = "English",
volume = "192",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "1",

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AU - Lee, In-Hwan

PY - 2002/7/1

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M3 - Conference article

AN - SCOPUS:0036650591

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JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

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