Low dark current schottky metal-semiconductor-metal photodetectors fabricated on AlGaN epitaxial layers for visible-blind ultraviolet detection

In-Hwan Lee

doi:10.1002/1521-396X(200207)192:1<R4::AID-PSSA99994>3.0.CO;2-N

Low dark current schottky metal-semiconductor-metal photodetectors fabricated on AlGaN epitaxial layers for visible-blind ultraviolet detection

Research output: Contribution to journal › Conference article

Original language	English
Journal	Physica Status Solidi (A) Applied Research
Volume	192
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200207)192:1<R4::AID-PSSA99994>3.0.CO;2-N
Publication status	Published - 2002 Jul 1
Externally published	Yes
Event	4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain Duration: 2002 Mar 11 → 2002 Mar 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/1521-396X(200207)192:1<R4::AID-PSSA99994>3.0.CO;2-N

Cite this

Lee, I-H. (2002). Low dark current schottky metal-semiconductor-metal photodetectors fabricated on AlGaN epitaxial layers for visible-blind ultraviolet detection. Physica Status Solidi (A) Applied Research, 192(1). https://doi.org/10.1002/1521-396X(200207)192:1<R4::AID-PSSA99994>3.0.CO;2-N

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