Low dark current schottky metal-semiconductor-metal photodetectors fabricated on AlGaN epitaxial layers for visible-blind ultraviolet detection

In-Hwan Lee

Research output: Contribution to journal › Conference article

10 Citations (Scopus)
Original languageEnglish
JournalPhysica Status Solidi (A) Applied Research
Volume192
Issue number1
DOIs
Publication statusPublished - 2002 Jul 1
Externally publishedYes
Event4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain
Duration: 2002 Mar 11 → 2002 Mar 15

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Dark currents
Epitaxial layers
Photodetectors
Metals
Semiconductor materials
aluminum gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Low dark current schottky metal-semiconductor-metal photodetectors fabricated on AlGaN epitaxial layers for visible-blind ultraviolet detection. / Lee, In-Hwan.

In: Physica Status Solidi (A) Applied Research, Vol. 192, No. 1, 01.07.2002.

Research output: Contribution to journal › Conference article

Lee, I-H 2002, 'Low dark current schottky metal-semiconductor-metal photodetectors fabricated on AlGaN epitaxial layers for visible-blind ultraviolet detection', Physica Status Solidi (A) Applied Research, vol. 192, no. 1. https://doi.org/10.1002/1521-396X(200207)192:1<R4::AID-PSSA99994>3.0.CO;2-N
Lee I-H. Low dark current schottky metal-semiconductor-metal photodetectors fabricated on AlGaN epitaxial layers for visible-blind ultraviolet detection. Physica Status Solidi (A) Applied Research. 2002 Jul 1;192(1). https://doi.org/10.1002/1521-396X(200207)192:1<R4::AID-PSSA99994>3.0.CO;2-N
Lee, In-Hwan. / Low dark current schottky metal-semiconductor-metal photodetectors fabricated on AlGaN epitaxial layers for visible-blind ultraviolet detection. In: Physica Status Solidi (A) Applied Research. 2002 ; Vol. 192, No. 1.
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