TY - JOUR
T1 - Low-energy band structure very sensitive to the interlayer distance in Bernal-stacked tetralayer graphene
AU - Lee, Kyu Won
AU - Lee, Cheol Eui
N1 - Funding Information:
This work was supported by the National Research Foundation of Korea (Project Nos. 2016R1D1A1A09917003 and 2016R1D1A1B03931144 ). K.W.L. gratefully acknowledges a Korea University research grant.
Publisher Copyright:
© 2018 Korean Physical Society
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/11
Y1 - 2018/11
N2 - We have investigated Bernal-stacked tetralayer graphene as a function of interlayer distance and perpendicular electric field by using density functional theory calculations. The low-energy band structure was found to be very sensitive to the interlayer distance, undergoing a metal-insulator transition. It can be attributed to the nearest-layer coupling that is more sensitive to the interlayer distance than are the next-nearest-layer couplings. Under a perpendicular electric field above a critical field, six electric-field-induced Dirac cones with mass gaps predicted in tight-binding models were confirmed, however, our density functional theory calculations demonstrate a phase transition to a quantum valley Hall insulator, contrasting to the tight-binding model prediction of an ordinary insulator.
AB - We have investigated Bernal-stacked tetralayer graphene as a function of interlayer distance and perpendicular electric field by using density functional theory calculations. The low-energy band structure was found to be very sensitive to the interlayer distance, undergoing a metal-insulator transition. It can be attributed to the nearest-layer coupling that is more sensitive to the interlayer distance than are the next-nearest-layer couplings. Under a perpendicular electric field above a critical field, six electric-field-induced Dirac cones with mass gaps predicted in tight-binding models were confirmed, however, our density functional theory calculations demonstrate a phase transition to a quantum valley Hall insulator, contrasting to the tight-binding model prediction of an ordinary insulator.
KW - A. Tetralayer graphene
KW - B. Interlayer couplings
KW - C. Metal-insulator transition
KW - D. Quantum valley Hall effect
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U2 - 10.1016/j.cap.2018.08.003
DO - 10.1016/j.cap.2018.08.003
M3 - Article
AN - SCOPUS:85051561227
SN - 1567-1739
VL - 18
SP - 1393
EP - 1398
JO - Current Applied Physics
JF - Current Applied Physics
IS - 11
ER -