Low energy electron beam irradiation effect on optical properties of nanopillar MQW InGaN/GaN structures

E. B. Yakimov, P. S. Vergeles, A. Y. Polyakov, Dae Woo Jeon, In-Hwan Lee

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The low energy electron beam irradiation (LEEBI) effect on optical properties of planar and nanopillar InGaN/GaN muliple quantum well light emitting structures was studied by the cathodoluminescence (CL) method. On the planar structures LEEBI leads to a formation of new InGaN-related emission bands red shifted in comparison with initial one at small irradiation doses and blue shifted at doses higher than 0.5 C/cm 2 . It was observed that after dry etching used for the nanopillar formation the main InGaN-related emission line moves from 2.92 to 2.98 eV that can be explained by a strain relaxation in the quantum wells. The optical properties of nanopilars start to change under LEEBI at a dose of about one order of magnitude lower than that for planar structures. At high irradiation doses the behavior of both structures under LEEBI is similar. The results obtained were explained by the formation and reconstruction of quantum dots inside the quantum wells due to a point defect generation and redistribution stimulated by the electron beam irradiation.

Original languageEnglish
Pages (from-to)268-271
Number of pages4
JournalAIP Conference Proceedings
Volume1583
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes
Event2014 IEEE International Conference on Automation Science and Engineering, CASE 2014 - Taipei, Taiwan, Province of China
Duration: 2014 Aug 182014 Aug 22

Fingerprint

optical properties
optical property
irradiation
electrons
electron beams
electron
energy
dosage
planar structures
quantum wells
quantum dots
well
etching
cathodoluminescence
effect
point defects
defect
dose

Keywords

  • CL
  • InGaN/GaN
  • LEEBI
  • MQW
  • nanopillar
  • strain relaxation

ASJC Scopus subject areas

  • Ecology, Evolution, Behavior and Systematics
  • Ecology
  • Plant Science
  • Physics and Astronomy(all)
  • Nature and Landscape Conservation

Cite this

Low energy electron beam irradiation effect on optical properties of nanopillar MQW InGaN/GaN structures. / Yakimov, E. B.; Vergeles, P. S.; Polyakov, A. Y.; Jeon, Dae Woo; Lee, In-Hwan.

In: AIP Conference Proceedings, Vol. 1583, 01.01.2014, p. 268-271.

Research output: Contribution to journalConference article

Yakimov, E. B. ; Vergeles, P. S. ; Polyakov, A. Y. ; Jeon, Dae Woo ; Lee, In-Hwan. / Low energy electron beam irradiation effect on optical properties of nanopillar MQW InGaN/GaN structures. In: AIP Conference Proceedings. 2014 ; Vol. 1583. pp. 268-271.
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abstract = "The low energy electron beam irradiation (LEEBI) effect on optical properties of planar and nanopillar InGaN/GaN muliple quantum well light emitting structures was studied by the cathodoluminescence (CL) method. On the planar structures LEEBI leads to a formation of new InGaN-related emission bands red shifted in comparison with initial one at small irradiation doses and blue shifted at doses higher than 0.5 C/cm 2 . It was observed that after dry etching used for the nanopillar formation the main InGaN-related emission line moves from 2.92 to 2.98 eV that can be explained by a strain relaxation in the quantum wells. The optical properties of nanopilars start to change under LEEBI at a dose of about one order of magnitude lower than that for planar structures. At high irradiation doses the behavior of both structures under LEEBI is similar. The results obtained were explained by the formation and reconstruction of quantum dots inside the quantum wells due to a point defect generation and redistribution stimulated by the electron beam irradiation.",
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AU - Vergeles, P. S.

AU - Polyakov, A. Y.

AU - Jeon, Dae Woo

AU - Lee, In-Hwan

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N2 - The low energy electron beam irradiation (LEEBI) effect on optical properties of planar and nanopillar InGaN/GaN muliple quantum well light emitting structures was studied by the cathodoluminescence (CL) method. On the planar structures LEEBI leads to a formation of new InGaN-related emission bands red shifted in comparison with initial one at small irradiation doses and blue shifted at doses higher than 0.5 C/cm 2 . It was observed that after dry etching used for the nanopillar formation the main InGaN-related emission line moves from 2.92 to 2.98 eV that can be explained by a strain relaxation in the quantum wells. The optical properties of nanopilars start to change under LEEBI at a dose of about one order of magnitude lower than that for planar structures. At high irradiation doses the behavior of both structures under LEEBI is similar. The results obtained were explained by the formation and reconstruction of quantum dots inside the quantum wells due to a point defect generation and redistribution stimulated by the electron beam irradiation.

AB - The low energy electron beam irradiation (LEEBI) effect on optical properties of planar and nanopillar InGaN/GaN muliple quantum well light emitting structures was studied by the cathodoluminescence (CL) method. On the planar structures LEEBI leads to a formation of new InGaN-related emission bands red shifted in comparison with initial one at small irradiation doses and blue shifted at doses higher than 0.5 C/cm 2 . It was observed that after dry etching used for the nanopillar formation the main InGaN-related emission line moves from 2.92 to 2.98 eV that can be explained by a strain relaxation in the quantum wells. The optical properties of nanopilars start to change under LEEBI at a dose of about one order of magnitude lower than that for planar structures. At high irradiation doses the behavior of both structures under LEEBI is similar. The results obtained were explained by the formation and reconstruction of quantum dots inside the quantum wells due to a point defect generation and redistribution stimulated by the electron beam irradiation.

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