Low-frequency noise in junctionless multigate transistors

Doyoung Jang, Jae Woo Lee, Chi Woo Lee, Jean Pierre Colinge, Laurent Mont̀s, Jung Il Lee, Gyu Tae Kim, Ǵrard Ghibaudo

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40 Citations (Scopus)

Abstract

Low-frequency noise in n-type junctionless multigate transistors was investigated. It can be well understood with the carrier number fluctuations whereas the conduction is mainly limited by the bulk expecting Hooge mobility fluctuations. The trapping/release of charge carriers is related not only to the oxide-semiconductor interface but also to the depleted channel. The volume trap density is in the range of 6-30× 1016 cm-3 eV-1, which is similar to Si- SiO2 bulk transistors and remarkably lower than in high- k transistors. These results show that the noise in nanowire devices might be affected by additional trapping centers.

Original languageEnglish
Article number133502
JournalApplied Physics Letters
Volume98
Issue number13
DOIs
Publication statusPublished - 2011 Mar 28

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Jang, D., Lee, J. W., Lee, C. W., Colinge, J. P., Mont̀s, L., Lee, J. I., Kim, G. T., & Ghibaudo, Ǵ. (2011). Low-frequency noise in junctionless multigate transistors. Applied Physics Letters, 98(13), [133502]. https://doi.org/10.1063/1.3569724