Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Junhong Na, Min Kyu Joo, Minju Shin, Junghwan Huh, Jae Sung Kim, Mingxing Piao, Jun Eon Jin, Ho Kyun Jang, Hyung Jong Choi, Joon Hyung Shim, Gyu-Tae Kim

Research output: Contribution to journalArticle

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Abstract

Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (∼11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated with trapping/detrapping the charge carriers at the interface nicely described the noise behavior in the strong accumulation regime both with and without the Al2O3 passivation layer. The interface trap density at the MoS2-SiO 2 interface was extracted from the LFN analysis, and estimated to be Nit ∼ 1010 eV-1 cm-2 without and with the passivation layer. This suggested that the accumulation channel induced by the back-gate was not significantly influenced by the passivation layer. The Hooge mobility fluctuation (HMF) model implying the bulk conduction was found to describe the drain current fluctuations in the subthreshold regime, which is rarely observed in other nanodevices, attributed to those extremely thin channel sizes. In the case of the thick-MoS2 (∼40 nm-thick) without the passivation, the HMF model was clearly observed all over the operation regime, ensuring the existence of the bulk conduction in multilayer MoS2. With the Al2O3 passivation layer, the change in the noise behavior was explained from the point of formation of the additional top channel in the MoS2 because of the fixed charges in the Al2O3. The interface trap density from the additional CNF model was Nit = 1.8 × 1012 eV-1 cm-2 at the MoS2-Al2O3 interface.

Original languageEnglish
Pages (from-to)433-441
Number of pages9
JournalNanoscale
Volume6
Issue number1
DOIs
Publication statusPublished - 2014 Jan 7

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Field effect transistors
Passivation
Multilayers
Drain current
Beam plasma interactions
Charge carriers
Molybdenum
Semiconductor materials

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Low-frequency noise in multilayer MoS2 field-effect transistors : the effect of high-k passivation. / Na, Junhong; Joo, Min Kyu; Shin, Minju; Huh, Junghwan; Kim, Jae Sung; Piao, Mingxing; Jin, Jun Eon; Jang, Ho Kyun; Choi, Hyung Jong; Shim, Joon Hyung; Kim, Gyu-Tae.

In: Nanoscale, Vol. 6, No. 1, 07.01.2014, p. 433-441.

Research output: Contribution to journalArticle

Na, J, Joo, MK, Shin, M, Huh, J, Kim, JS, Piao, M, Jin, JE, Jang, HK, Choi, HJ, Shim, JH & Kim, G-T 2014, 'Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation', Nanoscale, vol. 6, no. 1, pp. 433-441. https://doi.org/10.1039/c3nr04218a
Na, Junhong ; Joo, Min Kyu ; Shin, Minju ; Huh, Junghwan ; Kim, Jae Sung ; Piao, Mingxing ; Jin, Jun Eon ; Jang, Ho Kyun ; Choi, Hyung Jong ; Shim, Joon Hyung ; Kim, Gyu-Tae. / Low-frequency noise in multilayer MoS2 field-effect transistors : the effect of high-k passivation. In: Nanoscale. 2014 ; Vol. 6, No. 1. pp. 433-441.
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