Low frequency noise reduction in multilayer WSe2 field effect transistors

Seung Pil Ko, Mingxing Piao, Ho Kyun Jang, Jong Mok Shin, Jun Eon Jin, Do Hyun Kim, Gyu-Tae Kim, Jiung Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report that noise level was reduced by passivating WSe2 field effect transistors (FETs) with high-k dielectric material. Low frequency noise and I-V characteristics of the device were measured from WSe2 FETs before and after the passivation with ZrO2 to confirm the effect of passivation by high-k dielectric material. As a result, there was no significant change in the I-V characteristics. In the low frequency noise analysis, our device showed 1/f noise behaviors, in agreement with the carrier number fluctuation (CNF) model. The passivation process contributed to the reduction of trap sites at the top surface, leading to the decrease of noise level at the low current regime. Extracted volume trap densities were reduced from 2.0 × 1020 cm-3eV-1 to 8.7 × 1019 cm-3eV-1.

Original languageEnglish
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1118-1121
Number of pages4
ISBN (Print)9781467381550
DOIs
Publication statusPublished - 2016 Jan 20
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: 2015 Jul 272015 Jul 30

Other

Other15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
CountryItaly
CityRome
Period15/7/2715/7/30

Fingerprint

Field effect transistors
Noise abatement
Passivation
Multilayers
High-k dielectric

Keywords

  • 2D materials
  • field effect transistors
  • low frequency noise
  • WSe2

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Ko, S. P., Piao, M., Jang, H. K., Shin, J. M., Jin, J. E., Kim, D. H., ... Cho, J. (2016). Low frequency noise reduction in multilayer WSe2 field effect transistors. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 1118-1121). [7388820] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388820

Low frequency noise reduction in multilayer WSe2 field effect transistors. / Ko, Seung Pil; Piao, Mingxing; Jang, Ho Kyun; Shin, Jong Mok; Jin, Jun Eon; Kim, Do Hyun; Kim, Gyu-Tae; Cho, Jiung.

IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1118-1121 7388820.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ko, SP, Piao, M, Jang, HK, Shin, JM, Jin, JE, Kim, DH, Kim, G-T & Cho, J 2016, Low frequency noise reduction in multilayer WSe2 field effect transistors. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388820, Institute of Electrical and Electronics Engineers Inc., pp. 1118-1121, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 15/7/27. https://doi.org/10.1109/NANO.2015.7388820
Ko SP, Piao M, Jang HK, Shin JM, Jin JE, Kim DH et al. Low frequency noise reduction in multilayer WSe2 field effect transistors. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1118-1121. 7388820 https://doi.org/10.1109/NANO.2015.7388820
Ko, Seung Pil ; Piao, Mingxing ; Jang, Ho Kyun ; Shin, Jong Mok ; Jin, Jun Eon ; Kim, Do Hyun ; Kim, Gyu-Tae ; Cho, Jiung. / Low frequency noise reduction in multilayer WSe2 field effect transistors. IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 1118-1121
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abstract = "We report that noise level was reduced by passivating WSe2 field effect transistors (FETs) with high-k dielectric material. Low frequency noise and I-V characteristics of the device were measured from WSe2 FETs before and after the passivation with ZrO2 to confirm the effect of passivation by high-k dielectric material. As a result, there was no significant change in the I-V characteristics. In the low frequency noise analysis, our device showed 1/f noise behaviors, in agreement with the carrier number fluctuation (CNF) model. The passivation process contributed to the reduction of trap sites at the top surface, leading to the decrease of noise level at the low current regime. Extracted volume trap densities were reduced from 2.0 × 1020 cm-3eV-1 to 8.7 × 1019 cm-3eV-1.",
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AU - Kim, Do Hyun

AU - Kim, Gyu-Tae

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N2 - We report that noise level was reduced by passivating WSe2 field effect transistors (FETs) with high-k dielectric material. Low frequency noise and I-V characteristics of the device were measured from WSe2 FETs before and after the passivation with ZrO2 to confirm the effect of passivation by high-k dielectric material. As a result, there was no significant change in the I-V characteristics. In the low frequency noise analysis, our device showed 1/f noise behaviors, in agreement with the carrier number fluctuation (CNF) model. The passivation process contributed to the reduction of trap sites at the top surface, leading to the decrease of noise level at the low current regime. Extracted volume trap densities were reduced from 2.0 × 1020 cm-3eV-1 to 8.7 × 1019 cm-3eV-1.

AB - We report that noise level was reduced by passivating WSe2 field effect transistors (FETs) with high-k dielectric material. Low frequency noise and I-V characteristics of the device were measured from WSe2 FETs before and after the passivation with ZrO2 to confirm the effect of passivation by high-k dielectric material. As a result, there was no significant change in the I-V characteristics. In the low frequency noise analysis, our device showed 1/f noise behaviors, in agreement with the carrier number fluctuation (CNF) model. The passivation process contributed to the reduction of trap sites at the top surface, leading to the decrease of noise level at the low current regime. Extracted volume trap densities were reduced from 2.0 × 1020 cm-3eV-1 to 8.7 × 1019 cm-3eV-1.

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