Low frequency noise reduction in multilayer WSe2 field effect transistors

Seung Pil Ko; Mingxing Piao; Ho Kyun Jang; Jong Mok Shin; Jun Eon Jin; Do Hyun Kim; Gyu-Tae Kim; Jiung Cho

doi:10.1109/NANO.2015.7388820

Low frequency noise reduction in multilayer WSe2 field effect transistors

Seung Pil Ko, Mingxing Piao, Ho Kyun Jang, Jong Mok Shin, Jun Eon Jin, Do Hyun Kim, Gyu-Tae Kim, Jiung Cho

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We report that noise level was reduced by passivating WSe2 field effect transistors (FETs) with high-k dielectric material. Low frequency noise and I-V characteristics of the device were measured from WSe2 FETs before and after the passivation with ZrO2 to confirm the effect of passivation by high-k dielectric material. As a result, there was no significant change in the I-V characteristics. In the low frequency noise analysis, our device showed 1/f noise behaviors, in agreement with the carrier number fluctuation (CNF) model. The passivation process contributed to the reduction of trap sites at the top surface, leading to the decrease of noise level at the low current regime. Extracted volume trap densities were reduced from 2.0 × 1020 cm-3eV-1 to 8.7 × 1019 cm-3eV-1.

Original language	English
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1118-1121
Number of pages	4
ISBN (Print)	9781467381550
DOIs	https://doi.org/10.1109/NANO.2015.7388820
Publication status	Published - 2016 Jan 20
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: 2015 Jul 27 → 2015 Jul 30

Other

Other	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/Territory	Italy
City	Rome
Period	15/7/27 → 15/7/30

Keywords

2D materials
field effect transistors
low frequency noise
WSe2

ASJC Scopus subject areas

Process Chemistry and Technology
Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Access to Document

10.1109/NANO.2015.7388820

Cite this

Ko, SP, Piao, M, Jang, HK, Shin, JM, Jin, JE, Kim, DH, Kim, G-T & Cho, J 2016, Low frequency noise reduction in multilayer WSe2 field effect transistors. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388820, Institute of Electrical and Electronics Engineers Inc., pp. 1118-1121, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 15/7/27. https://doi.org/10.1109/NANO.2015.7388820

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title = "Low frequency noise reduction in multilayer WSe2 field effect transistors",

abstract = "We report that noise level was reduced by passivating WSe2 field effect transistors (FETs) with high-k dielectric material. Low frequency noise and I-V characteristics of the device were measured from WSe2 FETs before and after the passivation with ZrO2 to confirm the effect of passivation by high-k dielectric material. As a result, there was no significant change in the I-V characteristics. In the low frequency noise analysis, our device showed 1/f noise behaviors, in agreement with the carrier number fluctuation (CNF) model. The passivation process contributed to the reduction of trap sites at the top surface, leading to the decrease of noise level at the low current regime. Extracted volume trap densities were reduced from 2.0 × 1020 cm-3eV-1 to 8.7 × 1019 cm-3eV-1.",

keywords = "2D materials, field effect transistors, low frequency noise, WSe2",

author = "Ko, {Seung Pil} and Mingxing Piao and Jang, {Ho Kyun} and Shin, {Jong Mok} and Jin, {Jun Eon} and Kim, {Do Hyun} and Gyu-Tae Kim and Jiung Cho",

year = "2016",

month = jan,

day = "20",

doi = "10.1109/NANO.2015.7388820",

language = "English",

isbn = "9781467381550",

pages = "1118--1121",

booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",

}

TY - GEN

T1 - Low frequency noise reduction in multilayer WSe2 field effect transistors

AU - Ko, Seung Pil

AU - Piao, Mingxing

AU - Jang, Ho Kyun

AU - Shin, Jong Mok

AU - Jin, Jun Eon

AU - Kim, Do Hyun

AU - Kim, Gyu-Tae

AU - Cho, Jiung

PY - 2016/1/20

Y1 - 2016/1/20

N2 - We report that noise level was reduced by passivating WSe2 field effect transistors (FETs) with high-k dielectric material. Low frequency noise and I-V characteristics of the device were measured from WSe2 FETs before and after the passivation with ZrO2 to confirm the effect of passivation by high-k dielectric material. As a result, there was no significant change in the I-V characteristics. In the low frequency noise analysis, our device showed 1/f noise behaviors, in agreement with the carrier number fluctuation (CNF) model. The passivation process contributed to the reduction of trap sites at the top surface, leading to the decrease of noise level at the low current regime. Extracted volume trap densities were reduced from 2.0 × 1020 cm-3eV-1 to 8.7 × 1019 cm-3eV-1.

AB - We report that noise level was reduced by passivating WSe2 field effect transistors (FETs) with high-k dielectric material. Low frequency noise and I-V characteristics of the device were measured from WSe2 FETs before and after the passivation with ZrO2 to confirm the effect of passivation by high-k dielectric material. As a result, there was no significant change in the I-V characteristics. In the low frequency noise analysis, our device showed 1/f noise behaviors, in agreement with the carrier number fluctuation (CNF) model. The passivation process contributed to the reduction of trap sites at the top surface, leading to the decrease of noise level at the low current regime. Extracted volume trap densities were reduced from 2.0 × 1020 cm-3eV-1 to 8.7 × 1019 cm-3eV-1.

KW - 2D materials

KW - field effect transistors

KW - low frequency noise

KW - WSe2

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U2 - 10.1109/NANO.2015.7388820

DO - 10.1109/NANO.2015.7388820

M3 - Conference contribution

AN - SCOPUS:84964342483

SN - 9781467381550

SP - 1118

EP - 1121

BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015

Y2 - 27 July 2015 through 30 July 2015

ER -

Low frequency noise reduction in multilayer WSe2 field effect transistors

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Keywords

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