Abstract
In this paper, we show that low-frequency noise observed in semiconductor devices, in particular Schottky diodes, can be utilized to analyze spectroscopically the distribution of the traps involved and thereby to diagnose specific structures and process conditions. All the possible known mechanisms for low-frequency noise, namely, mobility and diffusivity fluctuation, thermal activation, tunneling and random walk of electrons through bulk and/or interface trap states, are critically reviewed and compared. Also, experimental results are analyzed to give useful information on the trap distribution and the effect of process conditions on the device characteristics. Use of low-frequency noise measurements as a spectroscopy tool complementary to other conventional methods is emphasized.
| Original language | English |
|---|---|
| Pages (from-to) | 966-970 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 37 |
| Issue number | 6 |
| Publication status | Published - 2000 Dec 1 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Low frequency noise spectroscopy for Schottky contacts. / Lee, J. I.; Han, I. K.; Heo, D. C.; Brini, J.; Chovet, A.; Dimitriadis, C. A.; Jeong, Jichai.
In: Journal of the Korean Physical Society, Vol. 37, No. 6, 01.12.2000, p. 966-970.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low frequency noise spectroscopy for Schottky contacts
AU - Lee, J. I.
AU - Han, I. K.
AU - Heo, D. C.
AU - Brini, J.
AU - Chovet, A.
AU - Dimitriadis, C. A.
AU - Jeong, Jichai
PY - 2000/12/1
Y1 - 2000/12/1
N2 - In this paper, we show that low-frequency noise observed in semiconductor devices, in particular Schottky diodes, can be utilized to analyze spectroscopically the distribution of the traps involved and thereby to diagnose specific structures and process conditions. All the possible known mechanisms for low-frequency noise, namely, mobility and diffusivity fluctuation, thermal activation, tunneling and random walk of electrons through bulk and/or interface trap states, are critically reviewed and compared. Also, experimental results are analyzed to give useful information on the trap distribution and the effect of process conditions on the device characteristics. Use of low-frequency noise measurements as a spectroscopy tool complementary to other conventional methods is emphasized.
AB - In this paper, we show that low-frequency noise observed in semiconductor devices, in particular Schottky diodes, can be utilized to analyze spectroscopically the distribution of the traps involved and thereby to diagnose specific structures and process conditions. All the possible known mechanisms for low-frequency noise, namely, mobility and diffusivity fluctuation, thermal activation, tunneling and random walk of electrons through bulk and/or interface trap states, are critically reviewed and compared. Also, experimental results are analyzed to give useful information on the trap distribution and the effect of process conditions on the device characteristics. Use of low-frequency noise measurements as a spectroscopy tool complementary to other conventional methods is emphasized.
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UR - http://www.scopus.com/inward/citedby.url?scp=0034347676&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0034347676
VL - 37
SP - 966
EP - 970
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 6
ER -