Low frequency noise spectroscopy for Schottky contacts

J. I. Lee, I. K. Han, D. C. Heo, J. Brini, A. Chovet, C. A. Dimitriadis, Jichai Jeong

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

In this paper, we show that low-frequency noise observed in semiconductor devices, in particular Schottky diodes, can be utilized to analyze spectroscopically the distribution of the traps involved and thereby to diagnose specific structures and process conditions. All the possible known mechanisms for low-frequency noise, namely, mobility and diffusivity fluctuation, thermal activation, tunneling and random walk of electrons through bulk and/or interface trap states, are critically reviewed and compared. Also, experimental results are analyzed to give useful information on the trap distribution and the effect of process conditions on the device characteristics. Use of low-frequency noise measurements as a spectroscopy tool complementary to other conventional methods is emphasized.

Original languageEnglish
Pages (from-to)966-970
Number of pages5
JournalJournal of the Korean Physical Society
Volume37
Issue number6
Publication statusPublished - 2000 Dec 1

Fingerprint

electric contacts
traps
low frequencies
spectroscopy
noise measurement
Schottky diodes
semiconductor devices
random walk
diffusivity
activation
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Lee, J. I., Han, I. K., Heo, D. C., Brini, J., Chovet, A., Dimitriadis, C. A., & Jeong, J. (2000). Low frequency noise spectroscopy for Schottky contacts. Journal of the Korean Physical Society, 37(6), 966-970.

Low frequency noise spectroscopy for Schottky contacts. / Lee, J. I.; Han, I. K.; Heo, D. C.; Brini, J.; Chovet, A.; Dimitriadis, C. A.; Jeong, Jichai.

In: Journal of the Korean Physical Society, Vol. 37, No. 6, 01.12.2000, p. 966-970.

Research output: Contribution to journalArticle

Lee, JI, Han, IK, Heo, DC, Brini, J, Chovet, A, Dimitriadis, CA & Jeong, J 2000, 'Low frequency noise spectroscopy for Schottky contacts', Journal of the Korean Physical Society, vol. 37, no. 6, pp. 966-970.
Lee JI, Han IK, Heo DC, Brini J, Chovet A, Dimitriadis CA et al. Low frequency noise spectroscopy for Schottky contacts. Journal of the Korean Physical Society. 2000 Dec 1;37(6):966-970.
Lee, J. I. ; Han, I. K. ; Heo, D. C. ; Brini, J. ; Chovet, A. ; Dimitriadis, C. A. ; Jeong, Jichai. / Low frequency noise spectroscopy for Schottky contacts. In: Journal of the Korean Physical Society. 2000 ; Vol. 37, No. 6. pp. 966-970.
@article{41c5ba30bca84e1a97a174daea1f42d2,
title = "Low frequency noise spectroscopy for Schottky contacts",
abstract = "In this paper, we show that low-frequency noise observed in semiconductor devices, in particular Schottky diodes, can be utilized to analyze spectroscopically the distribution of the traps involved and thereby to diagnose specific structures and process conditions. All the possible known mechanisms for low-frequency noise, namely, mobility and diffusivity fluctuation, thermal activation, tunneling and random walk of electrons through bulk and/or interface trap states, are critically reviewed and compared. Also, experimental results are analyzed to give useful information on the trap distribution and the effect of process conditions on the device characteristics. Use of low-frequency noise measurements as a spectroscopy tool complementary to other conventional methods is emphasized.",
author = "Lee, {J. I.} and Han, {I. K.} and Heo, {D. C.} and J. Brini and A. Chovet and Dimitriadis, {C. A.} and Jichai Jeong",
year = "2000",
month = "12",
day = "1",
language = "English",
volume = "37",
pages = "966--970",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "6",

}

TY - JOUR

T1 - Low frequency noise spectroscopy for Schottky contacts

AU - Lee, J. I.

AU - Han, I. K.

AU - Heo, D. C.

AU - Brini, J.

AU - Chovet, A.

AU - Dimitriadis, C. A.

AU - Jeong, Jichai

PY - 2000/12/1

Y1 - 2000/12/1

N2 - In this paper, we show that low-frequency noise observed in semiconductor devices, in particular Schottky diodes, can be utilized to analyze spectroscopically the distribution of the traps involved and thereby to diagnose specific structures and process conditions. All the possible known mechanisms for low-frequency noise, namely, mobility and diffusivity fluctuation, thermal activation, tunneling and random walk of electrons through bulk and/or interface trap states, are critically reviewed and compared. Also, experimental results are analyzed to give useful information on the trap distribution and the effect of process conditions on the device characteristics. Use of low-frequency noise measurements as a spectroscopy tool complementary to other conventional methods is emphasized.

AB - In this paper, we show that low-frequency noise observed in semiconductor devices, in particular Schottky diodes, can be utilized to analyze spectroscopically the distribution of the traps involved and thereby to diagnose specific structures and process conditions. All the possible known mechanisms for low-frequency noise, namely, mobility and diffusivity fluctuation, thermal activation, tunneling and random walk of electrons through bulk and/or interface trap states, are critically reviewed and compared. Also, experimental results are analyzed to give useful information on the trap distribution and the effect of process conditions on the device characteristics. Use of low-frequency noise measurements as a spectroscopy tool complementary to other conventional methods is emphasized.

UR - http://www.scopus.com/inward/record.url?scp=0034347676&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034347676&partnerID=8YFLogxK

M3 - Article

VL - 37

SP - 966

EP - 970

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 6

ER -