Low operating currents of monolithically integrated 780 nm/650 nm-band self-sustained pulsating lasers with silicon nitride current blocking layers

Y. C. Shin, S. M. Whang, Tae Geun Kim

Research output: Contribution to journalArticle

Abstract

The characteristics of monolithically integrated 780 nm/650 nm-band self-sustained pulsating (SSP) lasers with silicon nitride current blocking layers are reported. The record low operating current of 60 mA at 5 mW, 70°C and a characteristic temperature of 90 K over 20 to 70°C were obtained from the 650 nm-band SSP lasers. The attenuation factor of the visibility was observed to be as low as 0.3, which ensures SSP operations of the dual-mode lasers.

Original languageEnglish
Pages (from-to)27-28
Number of pages2
JournalElectronics Letters
Volume41
Issue number25
DOIs
Publication statusPublished - 2005 Dec 8

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Silicon nitride
Lasers
Laser modes
Visibility
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Low operating currents of monolithically integrated 780 nm/650 nm-band self-sustained pulsating lasers with silicon nitride current blocking layers. / Shin, Y. C.; Whang, S. M.; Kim, Tae Geun.

In: Electronics Letters, Vol. 41, No. 25, 08.12.2005, p. 27-28.

Research output: Contribution to journalArticle

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