The characteristics of monolithically integrated 780 nm/650 nm-band self-sustained pulsating (SSP) lasers with silicon nitride current blocking layers are reported. The record low operating current of 60 mA at 5 mW, 70°C and a characteristic temperature of 90 K over 20 to 70°C were obtained from the 650 nm-band SSP lasers. The attenuation factor of the visibility was observed to be as low as 0.3, which ensures SSP operations of the dual-mode lasers.
|Number of pages||2|
|Publication status||Published - 2005 Dec 8|
ASJC Scopus subject areas
- Electrical and Electronic Engineering