Low parasitic resistance process in low-temperature polycrystalline thin film transistors using Ni-silicide

Yong Duck Son, Kyu Sik Cho, Jong Uk Kwak, Jin Jang, Won Kyu Park, Donghwan Kim

Research output: Contribution to journalArticle

Abstract

We have studied a poly crystalline silicon thin-film-transistor (poly-Si TFT) process that has very low parasitic resistance by using a Ni-silicide. The poly-Si TFT characteristics having Ni-silicide source/drain region were compared with a conventional ion-doped source/drain region TFT. On reducing the source/drain parasitic resistance, the transconductance of poly-Si TFT increases. The poly-Si TFT having a Ni-silicide source/drain region shows a higher field effect mobility than conventional ion-doped source/drain poly-Si TFT. The poly-Si TFT using a Ni-silicide source/drain exhibited a field-effect mobility of 60 cm2/Vs, and a sheet resistance at the source/drain region of 200 ω/sq.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume42
Issue numberSPEC.
Publication statusPublished - 2003 Feb 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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