Low parasitic resistance process in low-temperature polycrystalline thin film transistors using Ni-silicide

Yong Duck Son, Kyu Sik Cho, Jong Uk Kwak, Jin Jang, Won Kyu Park, Dong Hwan Kim

Research output: Contribution to journalConference article

Abstract

We have studied a poly crystalline silicon thin-film-transistor (poly-Si TFT) process that has very low parasitic resistance by using a Ni-silicide. The poly-Si TFT characteristics having Ni-silicide source/drain region were compared with a conventional ion-doped source/drain region TFT. On reducing the source/drain parasitic resistance, the transconductance of poly-Si TFT increases. The poly-Si TFT having a Ni-silicide source/drain region shows a higher field effect mobility than conventional ion-doped source/drain poly-Si TFT. The poly-Si TFT using a Ni-silicide source/drain exhibited a field-effect mobility of 60 cm2/Vs, and a sheet resistance at the source/drain region of 200 ω/sq.

Original languageEnglish
Pages (from-to)S176-S178
JournalJournal of the Korean Physical Society
Volume42
Issue numberSPEC.
Publication statusPublished - 2003 Feb
EventProceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of
Duration: 2002 Aug 202002 Aug 23

Keywords

  • LTPS TFT
  • Ni-silicide
  • Parastic resistance

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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