Low parasitic resistance process in low-temperature polycrystalline thin film transistors using Ni-silicide

Yong Duck Son, Kyu Sik Cho, Jong Uk Kwak, Jin Jang, Won Kyu Park, Donghwan Kim

Research output: Contribution to journalArticle

Abstract

We have studied a poly crystalline silicon thin-film-transistor (poly-Si TFT) process that has very low parasitic resistance by using a Ni-silicide. The poly-Si TFT characteristics having Ni-silicide source/drain region were compared with a conventional ion-doped source/drain region TFT. On reducing the source/drain parasitic resistance, the transconductance of poly-Si TFT increases. The poly-Si TFT having a Ni-silicide source/drain region shows a higher field effect mobility than conventional ion-doped source/drain poly-Si TFT. The poly-Si TFT using a Ni-silicide source/drain exhibited a field-effect mobility of 60 cm2/Vs, and a sheet resistance at the source/drain region of 200 ω/sq.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume42
Issue numberSPEC.
Publication statusPublished - 2003 Feb 1

Fingerprint

transistors
thin films
silicon
transconductance
ions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Low parasitic resistance process in low-temperature polycrystalline thin film transistors using Ni-silicide. / Son, Yong Duck; Cho, Kyu Sik; Kwak, Jong Uk; Jang, Jin; Park, Won Kyu; Kim, Donghwan.

In: Journal of the Korean Physical Society, Vol. 42, No. SPEC., 01.02.2003.

Research output: Contribution to journalArticle

Son, Yong Duck ; Cho, Kyu Sik ; Kwak, Jong Uk ; Jang, Jin ; Park, Won Kyu ; Kim, Donghwan. / Low parasitic resistance process in low-temperature polycrystalline thin film transistors using Ni-silicide. In: Journal of the Korean Physical Society. 2003 ; Vol. 42, No. SPEC.
@article{6a452a6a187f4c118c4930b8d14a550f,
title = "Low parasitic resistance process in low-temperature polycrystalline thin film transistors using Ni-silicide",
abstract = "We have studied a poly crystalline silicon thin-film-transistor (poly-Si TFT) process that has very low parasitic resistance by using a Ni-silicide. The poly-Si TFT characteristics having Ni-silicide source/drain region were compared with a conventional ion-doped source/drain region TFT. On reducing the source/drain parasitic resistance, the transconductance of poly-Si TFT increases. The poly-Si TFT having a Ni-silicide source/drain region shows a higher field effect mobility than conventional ion-doped source/drain poly-Si TFT. The poly-Si TFT using a Ni-silicide source/drain exhibited a field-effect mobility of 60 cm2/Vs, and a sheet resistance at the source/drain region of 200 ω/sq.",
keywords = "LTPS TFT, Ni-silicide, Parastic resistance",
author = "Son, {Yong Duck} and Cho, {Kyu Sik} and Kwak, {Jong Uk} and Jin Jang and Park, {Won Kyu} and Donghwan Kim",
year = "2003",
month = "2",
day = "1",
language = "English",
volume = "42",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SPEC.",

}

TY - JOUR

T1 - Low parasitic resistance process in low-temperature polycrystalline thin film transistors using Ni-silicide

AU - Son, Yong Duck

AU - Cho, Kyu Sik

AU - Kwak, Jong Uk

AU - Jang, Jin

AU - Park, Won Kyu

AU - Kim, Donghwan

PY - 2003/2/1

Y1 - 2003/2/1

N2 - We have studied a poly crystalline silicon thin-film-transistor (poly-Si TFT) process that has very low parasitic resistance by using a Ni-silicide. The poly-Si TFT characteristics having Ni-silicide source/drain region were compared with a conventional ion-doped source/drain region TFT. On reducing the source/drain parasitic resistance, the transconductance of poly-Si TFT increases. The poly-Si TFT having a Ni-silicide source/drain region shows a higher field effect mobility than conventional ion-doped source/drain poly-Si TFT. The poly-Si TFT using a Ni-silicide source/drain exhibited a field-effect mobility of 60 cm2/Vs, and a sheet resistance at the source/drain region of 200 ω/sq.

AB - We have studied a poly crystalline silicon thin-film-transistor (poly-Si TFT) process that has very low parasitic resistance by using a Ni-silicide. The poly-Si TFT characteristics having Ni-silicide source/drain region were compared with a conventional ion-doped source/drain region TFT. On reducing the source/drain parasitic resistance, the transconductance of poly-Si TFT increases. The poly-Si TFT having a Ni-silicide source/drain region shows a higher field effect mobility than conventional ion-doped source/drain poly-Si TFT. The poly-Si TFT using a Ni-silicide source/drain exhibited a field-effect mobility of 60 cm2/Vs, and a sheet resistance at the source/drain region of 200 ω/sq.

KW - LTPS TFT

KW - Ni-silicide

KW - Parastic resistance

UR - http://www.scopus.com/inward/record.url?scp=0037306354&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037306354&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0037306354

VL - 42

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SPEC.

ER -