We have studied a poly crystalline silicon thin-film-transistor (poly-Si TFT) process that has very low parasitic resistance by using a Ni-silicide. The poly-Si TFT characteristics having Ni-silicide source/drain region were compared with a conventional ion-doped source/drain region TFT. On reducing the source/drain parasitic resistance, the transconductance of poly-Si TFT increases. The poly-Si TFT having a Ni-silicide source/drain region shows a higher field effect mobility than conventional ion-doped source/drain poly-Si TFT. The poly-Si TFT using a Ni-silicide source/drain exhibited a field-effect mobility of 60 cm2/Vs, and a sheet resistance at the source/drain region of 200 ω/sq.
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2003 Feb 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)