Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics

Youngin Jeon, Myeongwon Lee, Minsuk Kim, Yoonjoong Kim, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of ∼0.2 nW (or ∼6.6 pW). The low-power inverting operation with a voltage gain of ∼18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and −0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)1-9
Number of pages9
JournalNano Research
DOIs
Publication statusAccepted/In press - 2016 Mar 22

Fingerprint

Silicon
Nanowires
Plastics
Electric potential
Formability
Threshold voltage
Transistors
Electric power utilization
Fatigue of materials

Keywords

  • bendable electronics
  • inverter
  • low-power functionality
  • silicon nanowire

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics. / Jeon, Youngin; Lee, Myeongwon; Kim, Minsuk; Kim, Yoonjoong; Kim, Sangsig.

In: Nano Research, 22.03.2016, p. 1-9.

Research output: Contribution to journalArticle

Jeon, Youngin ; Lee, Myeongwon ; Kim, Minsuk ; Kim, Yoonjoong ; Kim, Sangsig. / Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics. In: Nano Research. 2016 ; pp. 1-9.
@article{53e240eaa9b449dfbfd649ca13893065,
title = "Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics",
abstract = "In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of ∼0.2 nW (or ∼6.6 pW). The low-power inverting operation with a voltage gain of ∼18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and −0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties. [Figure not available: see fulltext.]",
keywords = "bendable electronics, inverter, low-power functionality, silicon nanowire",
author = "Youngin Jeon and Myeongwon Lee and Minsuk Kim and Yoonjoong Kim and Sangsig Kim",
year = "2016",
month = "3",
day = "22",
doi = "10.1007/s12274-016-1036-7",
language = "English",
pages = "1--9",
journal = "Nano Research",
issn = "1998-0124",
publisher = "Press of Tsinghua University",

}

TY - JOUR

T1 - Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics

AU - Jeon, Youngin

AU - Lee, Myeongwon

AU - Kim, Minsuk

AU - Kim, Yoonjoong

AU - Kim, Sangsig

PY - 2016/3/22

Y1 - 2016/3/22

N2 - In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of ∼0.2 nW (or ∼6.6 pW). The low-power inverting operation with a voltage gain of ∼18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and −0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties. [Figure not available: see fulltext.]

AB - In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of ∼0.2 nW (or ∼6.6 pW). The low-power inverting operation with a voltage gain of ∼18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and −0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties. [Figure not available: see fulltext.]

KW - bendable electronics

KW - inverter

KW - low-power functionality

KW - silicon nanowire

UR - http://www.scopus.com/inward/record.url?scp=84961774656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961774656&partnerID=8YFLogxK

U2 - 10.1007/s12274-016-1036-7

DO - 10.1007/s12274-016-1036-7

M3 - Article

AN - SCOPUS:84961774656

SP - 1

EP - 9

JO - Nano Research

JF - Nano Research

SN - 1998-0124

ER -