Low power NiN-based resistive switching memory device using Ti doping

Dong Su Jeon, Ju Hyun Park, Myung Ju Kim, Tae Geun Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this study, we investigated the properties of Ti-doped NiN-based resistive switching random access memories (ReRAMs) in comparison with both Al-doped and conventional NiN-based samples. The Ti dopants form metallic TiN particles in the nitride film, which induce local electric fields during the forming process causing filaments to form close to the TiN clusters. The TiN components in the filaments reduce the current level for the high resistive switching state (HRS) and low resistive switching state (LRS). In our testing, the Ti-doped sample had a current of 10 nA in the HRS and 23 μA in the LRS with a high on/off ratio (>103). This implies that the Ti doping effect enabled the sample to operate at low power. Furthermore, the Ti-doped samples also exhibited highly uniform operating parameters. In terms of reliability, the retention was measured to be >106s at 85 °C, and the endurance was found to be at least 107 cycles. These results indicate that Ti-doped NiN-based ReRAM devices have significant advantages over other approaches for future nonvolatile memory devices.

Original languageEnglish
Article number183507
JournalApplied Physics Letters
Volume109
Issue number18
DOIs
Publication statusPublished - 2016 Oct 31

Fingerprint

random access memory
filaments
endurance
nitrides
cycles
electric fields

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Low power NiN-based resistive switching memory device using Ti doping. / Jeon, Dong Su; Park, Ju Hyun; Kim, Myung Ju; Kim, Tae Geun.

In: Applied Physics Letters, Vol. 109, No. 18, 183507, 31.10.2016.

Research output: Contribution to journalArticle

Jeon, Dong Su ; Park, Ju Hyun ; Kim, Myung Ju ; Kim, Tae Geun. / Low power NiN-based resistive switching memory device using Ti doping. In: Applied Physics Letters. 2016 ; Vol. 109, No. 18.
@article{010a616c40644d4ea7d4c30daed2d1e2,
title = "Low power NiN-based resistive switching memory device using Ti doping",
abstract = "In this study, we investigated the properties of Ti-doped NiN-based resistive switching random access memories (ReRAMs) in comparison with both Al-doped and conventional NiN-based samples. The Ti dopants form metallic TiN particles in the nitride film, which induce local electric fields during the forming process causing filaments to form close to the TiN clusters. The TiN components in the filaments reduce the current level for the high resistive switching state (HRS) and low resistive switching state (LRS). In our testing, the Ti-doped sample had a current of 10 nA in the HRS and 23 μA in the LRS with a high on/off ratio (>103). This implies that the Ti doping effect enabled the sample to operate at low power. Furthermore, the Ti-doped samples also exhibited highly uniform operating parameters. In terms of reliability, the retention was measured to be >106s at 85 °C, and the endurance was found to be at least 107 cycles. These results indicate that Ti-doped NiN-based ReRAM devices have significant advantages over other approaches for future nonvolatile memory devices.",
author = "Jeon, {Dong Su} and Park, {Ju Hyun} and Kim, {Myung Ju} and Kim, {Tae Geun}",
year = "2016",
month = "10",
day = "31",
doi = "10.1063/1.4966951",
language = "English",
volume = "109",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "18",

}

TY - JOUR

T1 - Low power NiN-based resistive switching memory device using Ti doping

AU - Jeon, Dong Su

AU - Park, Ju Hyun

AU - Kim, Myung Ju

AU - Kim, Tae Geun

PY - 2016/10/31

Y1 - 2016/10/31

N2 - In this study, we investigated the properties of Ti-doped NiN-based resistive switching random access memories (ReRAMs) in comparison with both Al-doped and conventional NiN-based samples. The Ti dopants form metallic TiN particles in the nitride film, which induce local electric fields during the forming process causing filaments to form close to the TiN clusters. The TiN components in the filaments reduce the current level for the high resistive switching state (HRS) and low resistive switching state (LRS). In our testing, the Ti-doped sample had a current of 10 nA in the HRS and 23 μA in the LRS with a high on/off ratio (>103). This implies that the Ti doping effect enabled the sample to operate at low power. Furthermore, the Ti-doped samples also exhibited highly uniform operating parameters. In terms of reliability, the retention was measured to be >106s at 85 °C, and the endurance was found to be at least 107 cycles. These results indicate that Ti-doped NiN-based ReRAM devices have significant advantages over other approaches for future nonvolatile memory devices.

AB - In this study, we investigated the properties of Ti-doped NiN-based resistive switching random access memories (ReRAMs) in comparison with both Al-doped and conventional NiN-based samples. The Ti dopants form metallic TiN particles in the nitride film, which induce local electric fields during the forming process causing filaments to form close to the TiN clusters. The TiN components in the filaments reduce the current level for the high resistive switching state (HRS) and low resistive switching state (LRS). In our testing, the Ti-doped sample had a current of 10 nA in the HRS and 23 μA in the LRS with a high on/off ratio (>103). This implies that the Ti doping effect enabled the sample to operate at low power. Furthermore, the Ti-doped samples also exhibited highly uniform operating parameters. In terms of reliability, the retention was measured to be >106s at 85 °C, and the endurance was found to be at least 107 cycles. These results indicate that Ti-doped NiN-based ReRAM devices have significant advantages over other approaches for future nonvolatile memory devices.

UR - http://www.scopus.com/inward/record.url?scp=84994316484&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84994316484&partnerID=8YFLogxK

U2 - 10.1063/1.4966951

DO - 10.1063/1.4966951

M3 - Article

AN - SCOPUS:84994316484

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 183507

ER -