Low-power temperature-independent ambient light sensor

S. I. Cho, J. H. Park, S. I. Lim, Soo-Won Kim, K. H. Baek

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Presented is an ambient light sensor (ALS) for portable electronic devices. The proposed ALS employs illuminance-dependent resolution adjustment and dark current compensation auxiliary circuits to consume low power, occupy small area, as well as achieve temperature-independent linearity. The ALS can convert illuminance of up to 16Klx to digital data without temperature-dependent dark current disturbance, while consuming a maximum 75 μA current and occupying only 640 × 420 μm area, including a 120 × 120 μm photodiode.

Original languageEnglish
Pages (from-to)981-983
Number of pages3
JournalElectronics Letters
Volume47
Issue number17
DOIs
Publication statusPublished - 2011 Aug 18

Fingerprint

Dark currents
Sensors
Photodiodes
Temperature
Networks (circuits)
Compensation and Redress

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Cho, S. I., Park, J. H., Lim, S. I., Kim, S-W., & Baek, K. H. (2011). Low-power temperature-independent ambient light sensor. Electronics Letters, 47(17), 981-983. https://doi.org/10.1049/el.2011.1506

Low-power temperature-independent ambient light sensor. / Cho, S. I.; Park, J. H.; Lim, S. I.; Kim, Soo-Won; Baek, K. H.

In: Electronics Letters, Vol. 47, No. 17, 18.08.2011, p. 981-983.

Research output: Contribution to journalArticle

Cho, SI, Park, JH, Lim, SI, Kim, S-W & Baek, KH 2011, 'Low-power temperature-independent ambient light sensor', Electronics Letters, vol. 47, no. 17, pp. 981-983. https://doi.org/10.1049/el.2011.1506
Cho, S. I. ; Park, J. H. ; Lim, S. I. ; Kim, Soo-Won ; Baek, K. H. / Low-power temperature-independent ambient light sensor. In: Electronics Letters. 2011 ; Vol. 47, No. 17. pp. 981-983.
@article{51512d3bdc7a4490a84eb4a725057cba,
title = "Low-power temperature-independent ambient light sensor",
abstract = "Presented is an ambient light sensor (ALS) for portable electronic devices. The proposed ALS employs illuminance-dependent resolution adjustment and dark current compensation auxiliary circuits to consume low power, occupy small area, as well as achieve temperature-independent linearity. The ALS can convert illuminance of up to 16Klx to digital data without temperature-dependent dark current disturbance, while consuming a maximum 75 μA current and occupying only 640 × 420 μm area, including a 120 × 120 μm photodiode.",
author = "Cho, {S. I.} and Park, {J. H.} and Lim, {S. I.} and Soo-Won Kim and Baek, {K. H.}",
year = "2011",
month = "8",
day = "18",
doi = "10.1049/el.2011.1506",
language = "English",
volume = "47",
pages = "981--983",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "17",

}

TY - JOUR

T1 - Low-power temperature-independent ambient light sensor

AU - Cho, S. I.

AU - Park, J. H.

AU - Lim, S. I.

AU - Kim, Soo-Won

AU - Baek, K. H.

PY - 2011/8/18

Y1 - 2011/8/18

N2 - Presented is an ambient light sensor (ALS) for portable electronic devices. The proposed ALS employs illuminance-dependent resolution adjustment and dark current compensation auxiliary circuits to consume low power, occupy small area, as well as achieve temperature-independent linearity. The ALS can convert illuminance of up to 16Klx to digital data without temperature-dependent dark current disturbance, while consuming a maximum 75 μA current and occupying only 640 × 420 μm area, including a 120 × 120 μm photodiode.

AB - Presented is an ambient light sensor (ALS) for portable electronic devices. The proposed ALS employs illuminance-dependent resolution adjustment and dark current compensation auxiliary circuits to consume low power, occupy small area, as well as achieve temperature-independent linearity. The ALS can convert illuminance of up to 16Klx to digital data without temperature-dependent dark current disturbance, while consuming a maximum 75 μA current and occupying only 640 × 420 μm area, including a 120 × 120 μm photodiode.

UR - http://www.scopus.com/inward/record.url?scp=80052158131&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052158131&partnerID=8YFLogxK

U2 - 10.1049/el.2011.1506

DO - 10.1049/el.2011.1506

M3 - Article

VL - 47

SP - 981

EP - 983

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 17

ER -