Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier

Jin Oh Song, Seong Rae Lee, Hyun Joon Shin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We developed a new Ti-alloyed Al-oxide (TiAlO x) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm 2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (V h) and breakdown voltage (V B) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlO x, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.

Original languageEnglish
Pages (from-to)2944-2946
Number of pages3
JournalIEEE Transactions on Magnetics
Volume41
Issue number10
DOIs
Publication statusPublished - 2005 Oct 1

Fingerprint

Tunnel junctions
low resistance
tunnel junctions
Oxides
Energy gap
thermal stability
oxides
Tunnelling magnetoresistance
Bias voltage
Electric breakdown
electrical faults
Annealing
orbitals
annealing
electric potential
Hot Temperature

Keywords

  • Magnetic tunnel junction (MTJ)
  • Resistance
  • Thermal and electrical stability
  • Ti-alloyed Al-oxide barrier

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier. / Song, Jin Oh; Lee, Seong Rae; Shin, Hyun Joon.

In: IEEE Transactions on Magnetics, Vol. 41, No. 10, 01.10.2005, p. 2944-2946.

Research output: Contribution to journalArticle

@article{a2f306c912524133822378bec9797913,
title = "Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier",
abstract = "We developed a new Ti-alloyed Al-oxide (TiAlO x) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm 2 as the Ti concentration increased to 5.33 at.{\%}. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20{\%} was maintained after annealing at 450°C and a higher bias voltage (V h) and breakdown voltage (V B) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.{\%} TiAlO x, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.",
keywords = "Magnetic tunnel junction (MTJ), Resistance, Thermal and electrical stability, Ti-alloyed Al-oxide barrier",
author = "Song, {Jin Oh} and Lee, {Seong Rae} and Shin, {Hyun Joon}",
year = "2005",
month = "10",
day = "1",
doi = "10.1109/TMAG.2005.855322",
language = "English",
volume = "41",
pages = "2944--2946",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

TY - JOUR

T1 - Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier

AU - Song, Jin Oh

AU - Lee, Seong Rae

AU - Shin, Hyun Joon

PY - 2005/10/1

Y1 - 2005/10/1

N2 - We developed a new Ti-alloyed Al-oxide (TiAlO x) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm 2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (V h) and breakdown voltage (V B) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlO x, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.

AB - We developed a new Ti-alloyed Al-oxide (TiAlO x) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm 2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (V h) and breakdown voltage (V B) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlO x, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.

KW - Magnetic tunnel junction (MTJ)

KW - Resistance

KW - Thermal and electrical stability

KW - Ti-alloyed Al-oxide barrier

UR - http://www.scopus.com/inward/record.url?scp=27744466648&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27744466648&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2005.855322

DO - 10.1109/TMAG.2005.855322

M3 - Article

VL - 41

SP - 2944

EP - 2946

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 10

ER -