Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier

Jin Oh Song, Seong Rae Lee, Hyun Joon Shin

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2 Citations (Scopus)


We developed a new Ti-alloyed Al-oxide (TiAlO x) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm 2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (V h) and breakdown voltage (V B) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlO x, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.

Original languageEnglish
Pages (from-to)2944-2946
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number10
Publication statusPublished - 2005 Oct 1



  • Magnetic tunnel junction (MTJ)
  • Resistance
  • Thermal and electrical stability
  • Ti-alloyed Al-oxide barrier

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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