Abstract
We developed a new Ti-alloyed Al-oxide (TiAlO x) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm 2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (V h) and breakdown voltage (V B) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlO x, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.
| Original language | English |
|---|---|
| Pages (from-to) | 2944-2946 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 41 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2005 Oct 1 |
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Keywords
- Magnetic tunnel junction (MTJ)
- Resistance
- Thermal and electrical stability
- Ti-alloyed Al-oxide barrier
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier. / Song, Jin Oh; Lee, Seong Rae; Shin, Hyun Joon.
In: IEEE Transactions on Magnetics, Vol. 41, No. 10, 01.10.2005, p. 2944-2946.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier
AU - Song, Jin Oh
AU - Lee, Seong Rae
AU - Shin, Hyun Joon
PY - 2005/10/1
Y1 - 2005/10/1
N2 - We developed a new Ti-alloyed Al-oxide (TiAlO x) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm 2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (V h) and breakdown voltage (V B) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlO x, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.
AB - We developed a new Ti-alloyed Al-oxide (TiAlO x) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm 2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (V h) and breakdown voltage (V B) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlO x, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.
KW - Magnetic tunnel junction (MTJ)
KW - Resistance
KW - Thermal and electrical stability
KW - Ti-alloyed Al-oxide barrier
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UR - http://www.scopus.com/inward/citedby.url?scp=27744466648&partnerID=8YFLogxK
U2 - 10.1109/TMAG.2005.855322
DO - 10.1109/TMAG.2005.855322
M3 - Article
VL - 41
SP - 2944
EP - 2946
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 10
ER -