TY - JOUR
T1 - Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier
AU - Song, Jin Oh
AU - Lee, Seong Rae
AU - Shin, Hyun Joon
N1 - Funding Information:
This work was supported by the Korean Ministry of Science and Technology under National Research Laboratory program, the Korea Research Foundation under Grant KRF-2004-005-C00068, and the Basic Research Program of the KOSEF under Grant R-01-2005-000-11188-0.
PY - 2005/10
Y1 - 2005/10
N2 - We developed a new Ti-alloyed Al-oxide (TiAlOx) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (Vh) and breakdown voltage (VB) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlOx, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.
AB - We developed a new Ti-alloyed Al-oxide (TiAlOx) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (Vh) and breakdown voltage (VB) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlOx, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.
KW - Magnetic tunnel junction (MTJ)
KW - Resistance
KW - Thermal and electrical stability
KW - Ti-alloyed Al-oxide barrier
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U2 - 10.1109/TMAG.2005.855322
DO - 10.1109/TMAG.2005.855322
M3 - Article
AN - SCOPUS:27744466648
VL - 41
SP - 2944
EP - 2946
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 10
ER -