Abstract
We developed a new Ti-alloyed Al-oxide (TiAlOx) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (Vh) and breakdown voltage (VB) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlOx, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.
Original language | English |
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Pages (from-to) | 2944-2946 |
Number of pages | 3 |
Journal | IEEE Transactions on Magnetics |
Volume | 41 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2005 Oct |
Keywords
- Magnetic tunnel junction (MTJ)
- Resistance
- Thermal and electrical stability
- Ti-alloyed Al-oxide barrier
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering