Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier

Jin Oh Song; Seong Rae Lee; Hyun Joon Shin

doi:10.1109/TMAG.2005.855322

Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier

Jin Oh Song, Seong Rae Lee, Hyun Joon Shin

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

We developed a new Ti-alloyed Al-oxide (TiAlO_x) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm² as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (V_h) and breakdown voltage (V_B) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlO_x, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.

Original language	English
Pages (from-to)	2944-2946
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2005.855322
Publication status	Published - 2005 Oct

Keywords

Magnetic tunnel junction (MTJ)
Resistance
Thermal and electrical stability
Ti-alloyed Al-oxide barrier

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Song, J. O., Lee, S. R., & Shin, H. J. (2005). Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier. IEEE Transactions on Magnetics, 41(10), 2944-2946. https://doi.org/10.1109/TMAG.2005.855322

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title = "Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier",

abstract = "We developed a new Ti-alloyed Al-oxide (TiAlOx) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (Vh) and breakdown voltage (VB) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlOx, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.",

keywords = "Magnetic tunnel junction (MTJ), Resistance, Thermal and electrical stability, Ti-alloyed Al-oxide barrier",

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AU - Lee, Seong Rae

AU - Shin, Hyun Joon

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N2 - We developed a new Ti-alloyed Al-oxide (TiAlOx) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (Vh) and breakdown voltage (VB) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlOx, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.

AB - We developed a new Ti-alloyed Al-oxide (TiAlOx) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (Vh) and breakdown voltage (VB) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlOx, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.

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