Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier

Jin Oh Song; Seong Rae Lee; Hyun Joon Shin

doi:10.1109/TMAG.2005.855322

Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier

Jin Oh Song, Seong Rae Lee, Hyun Joon Shin

GREEN SCHOOL (Graduate School of Energy and Environment)

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

We developed a new Ti-alloyed Al-oxide (TiAlO _x) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm ² as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (V _h) and breakdown voltage (V _B) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlO _x, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.

Original language	English
Pages (from-to)	2944-2946
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2005.855322
Publication status	Published - 2005 Oct 1

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Keywords

Magnetic tunnel junction (MTJ)
Resistance
Thermal and electrical stability
Ti-alloyed Al-oxide barrier

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy (miscellaneous)

Cite this

Song, J. O., Lee, S. R., & Shin, H. J. (2005). Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier. IEEE Transactions on Magnetics, 41(10), 2944-2946. https://doi.org/10.1109/TMAG.2005.855322

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title = "Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier",

abstract = "We developed a new Ti-alloyed Al-oxide (TiAlO x) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm 2 as the Ti concentration increased to 5.33 at.{\%}. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20{\%} was maintained after annealing at 450°C and a higher bias voltage (V h) and breakdown voltage (V B) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.{\%} TiAlO x, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.",

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AU - Shin, Hyun Joon

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N2 - We developed a new Ti-alloyed Al-oxide (TiAlO x) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm 2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (V h) and breakdown voltage (V B) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlO x, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.

AB - We developed a new Ti-alloyed Al-oxide (TiAlO x) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm 2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (V h) and breakdown voltage (V B) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlO x, barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.

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10.1109/TMAG.2005.855322