Low resistance and high reflectance Pt/Rh contacts to p-Type GaN for Ga N-based flip chip light-emitting diodes

Jae Ryoung Lee, Suk In Na, Jin Hee Jeong, Seung Nam Lee, Ja Soon Jang, Suk Hun Lee, Jong Je Jung, June O. Song, Tae Yeon Seong, Seong Ju Park

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32 Citations (Scopus)

Abstract

We report on a Pt(8 nm)/Rh(200 nm) metallization scheme for use in low resistance and high reflectance ohmic contacts to p-GaN for use in flip chip light-emitting diodes (FCLED) applications. The thermal annealing of a Pt/Rh contact at 500°C led to linear current-voltage characteristics with a specific contact resistance of 9.0 × 10-5 Ω cm 2 while the as-deposited Pt/Rh contact showed nonohmic characteristics. It was also shown that the 500°C annealed contact produces a high reflectance of 62% at a wavelength of 460 nm. Auger electron spectroscopy depth profiles and glancing-angle X-ray diffraction results indicated that the low contact resistance of the annealed sample can be attributed to the formation of Ga-Pt and Ga-Rh intermetallic phases. Furthermore, the electrical performance of an FCLED with the Pt/Rh reflector scheme was superior to that of a FCLED with a Ni/Au/Ag reflector scheme.

Original languageEnglish
Pages (from-to)G92-G94
JournalJournal of the Electrochemical Society
Volume152
Issue number1
DOIs
Publication statusPublished - 2005 Feb 7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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    Lee, J. R., Na, S. I., Jeong, J. H., Lee, S. N., Jang, J. S., Lee, S. H., Jung, J. J., Song, J. O., Seong, T. Y., & Park, S. J. (2005). Low resistance and high reflectance Pt/Rh contacts to p-Type GaN for Ga N-based flip chip light-emitting diodes. Journal of the Electrochemical Society, 152(1), G92-G94. https://doi.org/10.1149/1.1825382