Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes

Dong Seok Leem, June O. Song, J. S. Kwak, J. Cho, H. Kim, O. H. Nam, Y. Park, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated highly low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes (LEDs) for solid-state lighting applications. The Cu-Ni solid solution/Ag contacts produce specific contact resistances in the range of 10 -5-10 -6 Ω cm 2 when annealed at temperatures of 450 and 550°C for 1 min in air ambient. Measurements show that the reflectance of the annealed Cu-Ni solid solution/Ag contacts is 82.6% at a wavelength of 460 nm. Blue LEDs are fabricated with the annealed Cu-Ni solid solution/Ag contacts and single Ag contacts. The typical I-V characteristic of the LEDs made with the annealed Cu-Ni solid solution/Ag contact layer gives a forward-bias voltage of 3.08 V at 20 mA.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages2823-2826
Number of pages4
Volume1
Edition10
DOIs
Publication statusPublished - 2004
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Leem, D. S., Song, J. O., Kwak, J. S., Cho, J., Kim, H., Nam, O. H., Park, Y., & Seong, T. Y. (2004). Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes. In Physica Status Solidi C: Conferences (10 ed., Vol. 1, pp. 2823-2826) https://doi.org/10.1002/pssa.200405003