Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes

Dong Seok Leem, June O. Song, J. S. Kwak, J. Cho, H. Kim, O. H. Nam, Y. Park, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated highly low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes (LEDs) for solid-state lighting applications. The Cu-Ni solid solution/Ag contacts produce specific contact resistances in the range of 10 -5-10 -6 Ω cm 2 when annealed at temperatures of 450 and 550°C for 1 min in air ambient. Measurements show that the reflectance of the annealed Cu-Ni solid solution/Ag contacts is 82.6% at a wavelength of 460 nm. Blue LEDs are fabricated with the annealed Cu-Ni solid solution/Ag contacts and single Ag contacts. The typical I-V characteristic of the LEDs made with the annealed Cu-Ni solid solution/Ag contact layer gives a forward-bias voltage of 3.08 V at 20 mA.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages2823-2826
Number of pages4
Volume1
Edition10
DOIs
Publication statusPublished - 2004
Externally publishedYes

Fingerprint

low resistance
electric contacts
solid solutions
light emitting diodes
chips
contact resistance
illuminating
solid state
reflectance
air
electric potential
wavelengths
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Leem, D. S., Song, J. O., Kwak, J. S., Cho, J., Kim, H., Nam, O. H., ... Seong, T. Y. (2004). Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes. In Physica Status Solidi C: Conferences (10 ed., Vol. 1, pp. 2823-2826) https://doi.org/10.1002/pssa.200405003

Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes. / Leem, Dong Seok; Song, June O.; Kwak, J. S.; Cho, J.; Kim, H.; Nam, O. H.; Park, Y.; Seong, Tae Yeon.

Physica Status Solidi C: Conferences. Vol. 1 10. ed. 2004. p. 2823-2826.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Leem, DS, Song, JO, Kwak, JS, Cho, J, Kim, H, Nam, OH, Park, Y & Seong, TY 2004, Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes. in Physica Status Solidi C: Conferences. 10 edn, vol. 1, pp. 2823-2826. https://doi.org/10.1002/pssa.200405003
Leem DS, Song JO, Kwak JS, Cho J, Kim H, Nam OH et al. Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes. In Physica Status Solidi C: Conferences. 10 ed. Vol. 1. 2004. p. 2823-2826 https://doi.org/10.1002/pssa.200405003
Leem, Dong Seok ; Song, June O. ; Kwak, J. S. ; Cho, J. ; Kim, H. ; Nam, O. H. ; Park, Y. ; Seong, Tae Yeon. / Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes. Physica Status Solidi C: Conferences. Vol. 1 10. ed. 2004. pp. 2823-2826
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abstract = "We have investigated highly low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes (LEDs) for solid-state lighting applications. The Cu-Ni solid solution/Ag contacts produce specific contact resistances in the range of 10 -5-10 -6 Ω cm 2 when annealed at temperatures of 450 and 550°C for 1 min in air ambient. Measurements show that the reflectance of the annealed Cu-Ni solid solution/Ag contacts is 82.6{\%} at a wavelength of 460 nm. Blue LEDs are fabricated with the annealed Cu-Ni solid solution/Ag contacts and single Ag contacts. The typical I-V characteristic of the LEDs made with the annealed Cu-Ni solid solution/Ag contact layer gives a forward-bias voltage of 3.08 V at 20 mA.",
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AU - Cho, J.

AU - Kim, H.

AU - Nam, O. H.

AU - Park, Y.

AU - Seong, Tae Yeon

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