Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes

Dong Seok Leem, June O. Song, J. S. Kwak, J. Cho, H. Kim, O. H. Nam, Y. Park, Tae Yeon Seong

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4 Citations (Scopus)

Abstract

We have investigated highly low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes (LEDs) for solid-state lighting applications. The Cu-Ni solid solution/Ag contacts produce specific contact resistances in the range of 10-5 - 10 -6 Ω cm2 when annealed at temperatures of 450 and 550°C for 1 min in air ambient. Measurements show that the reflectance of the annealed Cu-Ni solid solution/Ag contacts is 82.6% at a wavelength of 460 nm. Blue LEDs are fabricated with the annealed Cu-Ni solid solution/Ag contacts and single Ag contacts. The typical I-V characteristic of the LEDs made with the annealed Cu-Ni solid solution/Ag contact layer gives a forward-bias voltage of 3.08 V at 20 mA.

Original languageEnglish
Pages (from-to)2823-2826
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number12
DOIs
Publication statusPublished - 2004 Sep
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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