Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes

Dong Seok Leem, June O. Song, J. S. Kwak, J. Cho, H. Kim, O. H. Nam, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have investigated highly low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes (LEDs) for solid-state lighting applications. The Cu-Ni solid solution/Ag contacts produce specific contact resistances in the range of 10-5 - 10 -6 Ω cm2 when annealed at temperatures of 450 and 550°C for 1 min in air ambient. Measurements show that the reflectance of the annealed Cu-Ni solid solution/Ag contacts is 82.6% at a wavelength of 460 nm. Blue LEDs are fabricated with the annealed Cu-Ni solid solution/Ag contacts and single Ag contacts. The typical I-V characteristic of the LEDs made with the annealed Cu-Ni solid solution/Ag contact layer gives a forward-bias voltage of 3.08 V at 20 mA.

Original languageEnglish
Pages (from-to)2823-2826
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number12
DOIs
Publication statusPublished - 2004 Sep
Externally publishedYes

Fingerprint

Ohmic contacts
low resistance
Light emitting diodes
electric contacts
Solid solutions
solid solutions
light emitting diodes
chips
Contact resistance
Bias voltage
contact resistance
illuminating
Lighting
solid state
reflectance
Wavelength
air
electric potential
Air
wavelengths

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes. / Leem, Dong Seok; Song, June O.; Kwak, J. S.; Cho, J.; Kim, H.; Nam, O. H.; Park, Y.; Seong, Tae Yeon.

In: Physica Status Solidi (A) Applied Research, Vol. 201, No. 12, 09.2004, p. 2823-2826.

Research output: Contribution to journalArticle

Leem, Dong Seok ; Song, June O. ; Kwak, J. S. ; Cho, J. ; Kim, H. ; Nam, O. H. ; Park, Y. ; Seong, Tae Yeon. / Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes. In: Physica Status Solidi (A) Applied Research. 2004 ; Vol. 201, No. 12. pp. 2823-2826.
@article{f23bd8a9772941988c236ac59cea2565,
title = "Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes",
abstract = "We have investigated highly low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes (LEDs) for solid-state lighting applications. The Cu-Ni solid solution/Ag contacts produce specific contact resistances in the range of 10-5 - 10 -6 Ω cm2 when annealed at temperatures of 450 and 550°C for 1 min in air ambient. Measurements show that the reflectance of the annealed Cu-Ni solid solution/Ag contacts is 82.6{\%} at a wavelength of 460 nm. Blue LEDs are fabricated with the annealed Cu-Ni solid solution/Ag contacts and single Ag contacts. The typical I-V characteristic of the LEDs made with the annealed Cu-Ni solid solution/Ag contact layer gives a forward-bias voltage of 3.08 V at 20 mA.",
author = "Leem, {Dong Seok} and Song, {June O.} and Kwak, {J. S.} and J. Cho and H. Kim and Nam, {O. H.} and Y. Park and Seong, {Tae Yeon}",
year = "2004",
month = "9",
doi = "10.1002/pssa.200405003",
language = "English",
volume = "201",
pages = "2823--2826",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "12",

}

TY - JOUR

T1 - Low resistance and highly reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes

AU - Leem, Dong Seok

AU - Song, June O.

AU - Kwak, J. S.

AU - Cho, J.

AU - Kim, H.

AU - Nam, O. H.

AU - Park, Y.

AU - Seong, Tae Yeon

PY - 2004/9

Y1 - 2004/9

N2 - We have investigated highly low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes (LEDs) for solid-state lighting applications. The Cu-Ni solid solution/Ag contacts produce specific contact resistances in the range of 10-5 - 10 -6 Ω cm2 when annealed at temperatures of 450 and 550°C for 1 min in air ambient. Measurements show that the reflectance of the annealed Cu-Ni solid solution/Ag contacts is 82.6% at a wavelength of 460 nm. Blue LEDs are fabricated with the annealed Cu-Ni solid solution/Ag contacts and single Ag contacts. The typical I-V characteristic of the LEDs made with the annealed Cu-Ni solid solution/Ag contact layer gives a forward-bias voltage of 3.08 V at 20 mA.

AB - We have investigated highly low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light emitting diodes (LEDs) for solid-state lighting applications. The Cu-Ni solid solution/Ag contacts produce specific contact resistances in the range of 10-5 - 10 -6 Ω cm2 when annealed at temperatures of 450 and 550°C for 1 min in air ambient. Measurements show that the reflectance of the annealed Cu-Ni solid solution/Ag contacts is 82.6% at a wavelength of 460 nm. Blue LEDs are fabricated with the annealed Cu-Ni solid solution/Ag contacts and single Ag contacts. The typical I-V characteristic of the LEDs made with the annealed Cu-Ni solid solution/Ag contact layer gives a forward-bias voltage of 3.08 V at 20 mA.

UR - http://www.scopus.com/inward/record.url?scp=6344276787&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344276787&partnerID=8YFLogxK

U2 - 10.1002/pssa.200405003

DO - 10.1002/pssa.200405003

M3 - Article

AN - SCOPUS:6344276787

VL - 201

SP - 2823

EP - 2826

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 12

ER -