Low resistance and highly reflective ohmic contacts to p-type GaN using transparent interlayers for flip-chip light emitting diodes

June O. Song, J. S. Kwak, Hyun Gi Hong, Ian T. Ferguson, Tae Yeon Seong

Research output: Contribution to journalConference article

Abstract

Zn (3 nm)/Rh (100 nm) and oxidized Ag-ITO (100 nm)/Al (200 nm) schemes for the formation of low resistance and highly reflective ohmic contacts for flip-chip light emitting diodes were investigated. It is shown that annealing the samples at 430 and 530°C for 1 min in air results in good ohmic behaviors with specific contact resistances of ∼10-5 Ωcm2 LEDs fabricated using the Zn/Rh contact layers give forward-bias voltages of 3.09-3.12 V at the injection current of 20 mA. Furthermore, the oxidized Ag-ITO film/Al contacts also show good ohmic characteristics with contact resistivity of 10-5 Ωcm 2 when annealed at 330°C for 5 min in vacuum. LEDs fabricated using the oxidized Ag-ITO film/Al contacts layers give forward-bias voltages of ∼3.40 V at 20 mA. It is clearly shown that a transparent contact interlayer is necessary to make high-quality ohmic contacts to p-type GaN for thermally stable flip-chip LEDs using Rh- and Al-reflectors.

Original languageEnglish
Pages (from-to)2207-2210
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - 2006 Jul 31
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 2005 Aug 282005 Sep 2

ASJC Scopus subject areas

  • Condensed Matter Physics

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