Low resistance and highly reflective Sb-doped SnO2/Ag ohmic contacts to p-type GaN for flip-chip LEDs

Dong Seok Leem, June O. Song, Hyun Gi Hong, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We have investigated high-quality Sb-doped SnO2/Ag ohmic contacts to p-GaN for use in flip-chip light emitting diodes (LEDs). The Sb-doped SnO2/Ag contacts produce specific contact resistances of ∼10-4 Ω cm2 upon annealing at 430 and 530°C for 1 min in air. It is shown that InGaN blue LEDs fabricated with the Sb-doped SnO2/Ag contacts give a forward-bias voltage of 3.18 V at 20 mA, while LEDs with Ag contacts show 3.36 V. It is further shown that the LEDs made with the Sb-doped SnO2/Ag contact layers show higher light output power compared with the LEDs with the Ag contacts.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number10
DOIs
Publication statusPublished - 2004 Nov 22
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this