We have investigated high-quality Sb-doped SnO2/Ag ohmic contacts to p-GaN for use in flip-chip light emitting diodes (LEDs). The Sb-doped SnO2/Ag contacts produce specific contact resistances of ∼10-4 Ω cm2 upon annealing at 430 and 530°C for 1 min in air. It is shown that InGaN blue LEDs fabricated with the Sb-doped SnO2/Ag contacts give a forward-bias voltage of 3.18 V at 20 mA, while LEDs with Ag contacts show 3.36 V. It is further shown that the LEDs made with the Sb-doped SnO2/Ag contact layers show higher light output power compared with the LEDs with the Ag contacts.
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering