Low resistance and highly reflective Sb-doped SnO2/Ag ohmic contacts to p-type GaN for flip-chip LEDs

Dong Seok Leem, June O. Song, Hyun Gi Hong, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have investigated high-quality Sb-doped SnO2/Ag ohmic contacts to p-GaN for use in flip-chip light emitting diodes (LEDs). The Sb-doped SnO2/Ag contacts produce specific contact resistances of ∼10-4 Ω cm2 upon annealing at 430 and 530°C for 1 min in air. It is shown that InGaN blue LEDs fabricated with the Sb-doped SnO2/Ag contacts give a forward-bias voltage of 3.18 V at 20 mA, while LEDs with Ag contacts show 3.36 V. It is further shown that the LEDs made with the Sb-doped SnO2/Ag contact layers show higher light output power compared with the LEDs with the Ag contacts.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number10
DOIs
Publication statusPublished - 2004 Nov 22
Externally publishedYes

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Ohmic contacts
low resistance
Light emitting diodes
electric contacts
light emitting diodes
chips
Contact resistance
Bias voltage
contact resistance
Annealing
annealing
output
air
electric potential
Air

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Low resistance and highly reflective Sb-doped SnO2/Ag ohmic contacts to p-type GaN for flip-chip LEDs. / Leem, Dong Seok; Song, June O.; Hong, Hyun Gi; Kwak, J. S.; Park, Y.; Seong, Tae Yeon.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 10, 22.11.2004.

Research output: Contribution to journalArticle

Leem, Dong Seok ; Song, June O. ; Hong, Hyun Gi ; Kwak, J. S. ; Park, Y. ; Seong, Tae Yeon. / Low resistance and highly reflective Sb-doped SnO2/Ag ohmic contacts to p-type GaN for flip-chip LEDs. In: Electrochemical and Solid-State Letters. 2004 ; Vol. 7, No. 10.
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