Low-resistance and highly-reflective Zn-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

June O. Song; Dong Seok Leem; J. S. Kwak; O. H. Nam; Y. Park; Tae Yeon Seong

doi:10.1063/1.1633992

Low-resistance and highly-reflective Zn-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

June O. Song, Dong Seok Leem, J. S. Kwak, O. H. Nam, Y. Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

The ZnNi ss/Ag scheme was investigated to achieve low resistance and highly reflective ohmic contacts for use in flip-chip LEDs. The contacts produced specific contact resistances. MQW blue LEDs fabricated with the annealed ZnNi ss/Ag p-type contact layers showed a forward-bias voltage of 3.24 V at an injection current of 20 mA.

Original language	English
Pages (from-to)	4990-4992
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	24
DOIs	https://doi.org/10.1063/1.1633992
Publication status	Published - 2003 Dec 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1633992

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title = "Low-resistance and highly-reflective Zn-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes",

abstract = "The ZnNi ss/Ag scheme was investigated to achieve low resistance and highly reflective ohmic contacts for use in flip-chip LEDs. The contacts produced specific contact resistances. MQW blue LEDs fabricated with the annealed ZnNi ss/Ag p-type contact layers showed a forward-bias voltage of 3.24 V at an injection current of 20 mA.",

author = "Song, {June O.} and Leem, {Dong Seok} and Kwak, {J. S.} and Nam, {O. H.} and Y. Park and Seong, {Tae Yeon}",

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AU - Song, June O.

AU - Leem, Dong Seok

AU - Kwak, J. S.

AU - Nam, O. H.

AU - Park, Y.

AU - Seong, Tae Yeon

PY - 2003/12/15

Y1 - 2003/12/15

N2 - The ZnNi ss/Ag scheme was investigated to achieve low resistance and highly reflective ohmic contacts for use in flip-chip LEDs. The contacts produced specific contact resistances. MQW blue LEDs fabricated with the annealed ZnNi ss/Ag p-type contact layers showed a forward-bias voltage of 3.24 V at an injection current of 20 mA.

AB - The ZnNi ss/Ag scheme was investigated to achieve low resistance and highly reflective ohmic contacts for use in flip-chip LEDs. The contacts produced specific contact resistances. MQW blue LEDs fabricated with the annealed ZnNi ss/Ag p-type contact layers showed a forward-bias voltage of 3.24 V at an injection current of 20 mA.

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Low-resistance and highly-reflective Zn-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

Abstract

ASJC Scopus subject areas

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