Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes

June O. Song; Dong Seok Leem; J. S. Kwak; O. H. Nam; Y. Park; Tae Yeon Seong

doi:10.1109/LPT.2004.827096

Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes

June O. Song, Dong Seok Leem, J. S. Kwak, O. H. Nam, Y. Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

We have investigated an Mg-doped In_xO_y (MIO)-Ag scheme for the formation of high-quality ohmic contacts to p-type GaN for flip-chip light-emitting diodes (LEDs). The as-deposited sample shows nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at temperatures of 330°C-530°C for 1 min in air ambient results in linear I-V behaviors, producing specific contact resistances of 10^-4-10^-5 Ω · cm². In addition, blue LEDs fabricated with the MIO-Ag contact layers give forward-bias voltages of 3.13-3.15 V at an injection current of 20 mA. It is further shown that LEDs made with the MIO-Ag contact layers give higher output power compared with that with the Ag contact layer. This result strongly indicates that the MIO-Ag can be a promising scheme for the realization of high brightness LEDs for solid-state lighting application.

Original language	English
Pages (from-to)	1450-1452
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	6
DOIs	https://doi.org/10.1109/LPT.2004.827096
Publication status	Published - 2004 Jun
Externally published	Yes

Keywords

Flip-chip light-emitting diode (LED)
GaN
Indium oxide
Ohmic contacts

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2004.827096

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title = "Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes",

abstract = "We have investigated an Mg-doped InxOy (MIO)-Ag scheme for the formation of high-quality ohmic contacts to p-type GaN for flip-chip light-emitting diodes (LEDs). The as-deposited sample shows nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at temperatures of 330°C-530°C for 1 min in air ambient results in linear I-V behaviors, producing specific contact resistances of 10-4-10-5 Ω · cm2. In addition, blue LEDs fabricated with the MIO-Ag contact layers give forward-bias voltages of 3.13-3.15 V at an injection current of 20 mA. It is further shown that LEDs made with the MIO-Ag contact layers give higher output power compared with that with the Ag contact layer. This result strongly indicates that the MIO-Ag can be a promising scheme for the realization of high brightness LEDs for solid-state lighting application.",

keywords = "Flip-chip light-emitting diode (LED), GaN, Indium oxide, Ohmic contacts",

author = "Song, {June O.} and Leem, {Dong Seok} and Kwak, {J. S.} and Nam, {O. H.} and Y. Park and Seong, {Tae Yeon}",

note = "Funding Information: Manuscript received October 10, 2003; revised January 29, 2004. This work was supported by the Basic Research Program of the Korea Science and Engineering Foundation under Grant R01-2002-000-00356-0. J.-O. Song, D.-S. Leem, and T.-Y. Seong are with the Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea (e-mail: tyseong@gist.ac.kr). J. S. Kwak, O. H. Nam, and Y. Park are with the Photonics Laboratory, Sam-sung Advanced Institute of Technology, Suwon 440-600, Korea. Digital Object Identifier 10.1109/LPT.2004.827096",

year = "2004",

month = jun,

doi = "10.1109/LPT.2004.827096",

language = "English",

volume = "16",

pages = "1450--1452",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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TY - JOUR

T1 - Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes

AU - Song, June O.

AU - Leem, Dong Seok

AU - Kwak, J. S.

AU - Nam, O. H.

AU - Park, Y.

AU - Seong, Tae Yeon

N1 - Funding Information: Manuscript received October 10, 2003; revised January 29, 2004. This work was supported by the Basic Research Program of the Korea Science and Engineering Foundation under Grant R01-2002-000-00356-0. J.-O. Song, D.-S. Leem, and T.-Y. Seong are with the Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea (e-mail: tyseong@gist.ac.kr). J. S. Kwak, O. H. Nam, and Y. Park are with the Photonics Laboratory, Sam-sung Advanced Institute of Technology, Suwon 440-600, Korea. Digital Object Identifier 10.1109/LPT.2004.827096

PY - 2004/6

Y1 - 2004/6

N2 - We have investigated an Mg-doped InxOy (MIO)-Ag scheme for the formation of high-quality ohmic contacts to p-type GaN for flip-chip light-emitting diodes (LEDs). The as-deposited sample shows nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at temperatures of 330°C-530°C for 1 min in air ambient results in linear I-V behaviors, producing specific contact resistances of 10-4-10-5 Ω · cm2. In addition, blue LEDs fabricated with the MIO-Ag contact layers give forward-bias voltages of 3.13-3.15 V at an injection current of 20 mA. It is further shown that LEDs made with the MIO-Ag contact layers give higher output power compared with that with the Ag contact layer. This result strongly indicates that the MIO-Ag can be a promising scheme for the realization of high brightness LEDs for solid-state lighting application.

AB - We have investigated an Mg-doped InxOy (MIO)-Ag scheme for the formation of high-quality ohmic contacts to p-type GaN for flip-chip light-emitting diodes (LEDs). The as-deposited sample shows nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at temperatures of 330°C-530°C for 1 min in air ambient results in linear I-V behaviors, producing specific contact resistances of 10-4-10-5 Ω · cm2. In addition, blue LEDs fabricated with the MIO-Ag contact layers give forward-bias voltages of 3.13-3.15 V at an injection current of 20 mA. It is further shown that LEDs made with the MIO-Ag contact layers give higher output power compared with that with the Ag contact layer. This result strongly indicates that the MIO-Ag can be a promising scheme for the realization of high brightness LEDs for solid-state lighting application.

KW - Flip-chip light-emitting diode (LED)

KW - GaN

KW - Indium oxide

KW - Ohmic contacts

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SP - 1450

EP - 1452

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 6

ER -

Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes

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Keywords

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