Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes

June O. Song, Dong Seok Leem, J. S. Kwak, O. H. Nam, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

72 Citations (Scopus)


We have investigated an Mg-doped InxOy (MIO)-Ag scheme for the formation of high-quality ohmic contacts to p-type GaN for flip-chip light-emitting diodes (LEDs). The as-deposited sample shows nonlinear current-voltage (I-V) characteristics. However, annealing the contacts at temperatures of 330°C-530°C for 1 min in air ambient results in linear I-V behaviors, producing specific contact resistances of 10-4-10-5 Ω · cm2. In addition, blue LEDs fabricated with the MIO-Ag contact layers give forward-bias voltages of 3.13-3.15 V at an injection current of 20 mA. It is further shown that LEDs made with the MIO-Ag contact layers give higher output power compared with that with the Ag contact layer. This result strongly indicates that the MIO-Ag can be a promising scheme for the realization of high brightness LEDs for solid-state lighting application.

Original languageEnglish
Pages (from-to)1450-1452
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number6
Publication statusPublished - 2004 Jun 1
Externally publishedYes



  • Flip-chip light-emitting diode (LED)
  • GaN
  • Indium oxide
  • Ohmic contacts

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this