Low-resistance and reflective Ni/Rh and Ni/Au/Rh contacts to p-GaN for flip-chip LEDs

Jeong W. Park, June O. Song, Dong Seok Leem, Tae Yeon Seong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on the formation of high-quality ohmic contacts to p-type GaN (4 × 1017 cm-3) using Ni (5 nm)/Rh (120 nm) and Ni (5 nm)/Au (5 nm)/Rh (120 nm) schemes for use in flip-chip light-emitting diodes (LEDs). Both the Ni/Rh and Ni/Au/Rh contacts become ohmic with specific contact resistances of 10-5 to 10-6 Ω cm2, when annealed at 350°C for 2 min in air ambient. LEDs are fabricated using the Ni/Au/Rh and Ni/Au contact layers, which give a forward-bias voltage of 3.32 and 3.45 V at injection current of 20 mA, respectively. This indicates that the Rh-based contacts could be suitable for high power flip-chip LEDs. All rights reserved.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume8
Issue number1
DOIs
Publication statusPublished - 2005 Jan 31
Externally publishedYes

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low resistance
Light emitting diodes
light emitting diodes
Ohmic contacts
chips
electric contacts
Contact resistance
Bias voltage
contact resistance
injection
air
electric potential
Air

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Low-resistance and reflective Ni/Rh and Ni/Au/Rh contacts to p-GaN for flip-chip LEDs. / Park, Jeong W.; Song, June O.; Leem, Dong Seok; Seong, Tae Yeon.

In: Electrochemical and Solid-State Letters, Vol. 8, No. 1, 31.01.2005.

Research output: Contribution to journalArticle

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