Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p- In0.15 Ga0.85 Np-GaN layer

Ja Soon Jang, Tae Yeon Seong

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We report on the formation of low-resistance and thermally stable indium tin oxide (ITO) Ohmic contacts on p-GaN using a strained p-InGaN (5 nm) layer. Unlike as-deposited ITO contacts on p-GaN, the as-deposited contacts to a strained p-InGaNp-GaN layer exhibit Ohmic behavior. The current-voltage characteristics of the ITOInGaNGaN contacts are further improved upon annealing at 550 °C for 1 min and the specific contact resistance is 3.2 (±0.8) × 10-5 cm2. In addition, the contact resistivity and surface morphology of the ITOInGaNGaN contacts annealed for 30 min are only slightly increased, confirming the thermal stability of this scheme. Based on the electrical and Auger spectroscopic data, the low contact resistivity and thermal stability of the ITOInGaNGaN contacts are described in terms of the polarization effect, increased acceptor concentration, and formation of diffusion barrier layer at the interface.

Original languageEnglish
Article number013711
JournalJournal of Applied Physics
Volume101
Issue number1
DOIs
Publication statusPublished - 2007 Jan 24

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low resistance
indium oxides
tin oxides
electric contacts
thermal stability
electrical resistivity
barrier layers
contact resistance
annealing
electric potential
polarization

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Low-resistance and thermally stable indium tin oxide Ohmic contacts on strained p- In0.15 Ga0.85 Np-GaN layer. / Jang, Ja Soon; Seong, Tae Yeon.

In: Journal of Applied Physics, Vol. 101, No. 1, 013711, 24.01.2007.

Research output: Contribution to journalArticle

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