Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN

Ja Soon Jang, Chang Won Lee, Seong Ju Park, Tae Yeon Seong, I. T. Ferguson

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report on low-resistance and thermally stable Pd/Ru ohmic contacts to surface-treated p-GaN (3 × 1017 cm-3). It is shown that annealing at 500°C for 2 min in a N2 ambient improves ohmic contact properties. Specific contact resistance is measured to be 9.2(±0.2) × 10-4 and 2.4(±0.2) × 10-5 Ωcm2 for the as-deposited and annealed samples, respectively. Atomic force microscopy results show that the surfaces of both the contacts are remarkably smooth with a root-mean-square (rms) roughness of about 0.6 nm. The current-voltage-temperature (I-V-T) and calculation results indicate that, for the as-deposited contact, thermionic field emission is dominant, while for the annealed contact, field emission dominates the current flow.

Original languageEnglish
Article number181
Pages (from-to)903-906
Number of pages4
JournalJournal of Electronic Materials
Volume31
Issue number9
DOIs
Publication statusPublished - 2002
Externally publishedYes

Keywords

  • Gallium nitride
  • Ohmic contact
  • Schottky barrier
  • Specific contact resistance
  • Surface Fermi level

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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