Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN

Ja Soon Jang, Chang Won Lee, Seong Ju Park, Tae Yeon Seong, I. T. Ferguson

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report on low-resistance and thermally stable Pd/Ru ohmic contacts to surface-treated p-GaN (3 × 1017 cm-3). It is shown that annealing at 500°C for 2 min in a N2 ambient improves ohmic contact properties. Specific contact resistance is measured to be 9.2(±0.2) × 10-4 and 2.4(±0.2) × 10-5 Ωcm2 for the as-deposited and annealed samples, respectively. Atomic force microscopy results show that the surfaces of both the contacts are remarkably smooth with a root-mean-square (rms) roughness of about 0.6 nm. The current-voltage-temperature (I-V-T) and calculation results indicate that, for the as-deposited contact, thermionic field emission is dominant, while for the annealed contact, field emission dominates the current flow.

Original languageEnglish
Pages (from-to)903-906
Number of pages4
JournalJournal of Electronic Materials
Volume31
Issue number9
Publication statusPublished - 2002 Sep 1
Externally publishedYes

Fingerprint

Ohmic contacts
low resistance
Field emission
electric contacts
Thermionic emission
field emission
Contact resistance
Atomic force microscopy
Surface roughness
thermionic emission
Annealing
contact resistance
Electric potential
roughness
atomic force microscopy
annealing
electric potential
Temperature
temperature

Keywords

  • Gallium nitride
  • Ohmic contact
  • Schottky barrier
  • Specific contact resistance
  • Surface Fermi level

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Jang, J. S., Lee, C. W., Park, S. J., Seong, T. Y., & Ferguson, I. T. (2002). Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN. Journal of Electronic Materials, 31(9), 903-906.

Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN. / Jang, Ja Soon; Lee, Chang Won; Park, Seong Ju; Seong, Tae Yeon; Ferguson, I. T.

In: Journal of Electronic Materials, Vol. 31, No. 9, 01.09.2002, p. 903-906.

Research output: Contribution to journalArticle

Jang, JS, Lee, CW, Park, SJ, Seong, TY & Ferguson, IT 2002, 'Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN', Journal of Electronic Materials, vol. 31, no. 9, pp. 903-906.
Jang, Ja Soon ; Lee, Chang Won ; Park, Seong Ju ; Seong, Tae Yeon ; Ferguson, I. T. / Low-resistance and thermally stable Pd/Ru ohmic contacts to p-type GaN. In: Journal of Electronic Materials. 2002 ; Vol. 31, No. 9. pp. 903-906.
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AU - Ferguson, I. T.

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