High-quality Pt (20 nm)/Ru (50 nm) Ohmic contacts to surface-treated p-GaN with lowest resistance and thermal stability are reported. The electrical properties and interfacial reactions of the contacts to GaN were investigated using current-voltage, Auger electron spectroscopy, and glancing angle X-ray diffraction measurements. It is shown that the as-deposited contact produces a specific contact resistance of 7.8(±2.2) × 10-4 Ωcm2, while the contact annealed at 600°C for 2 min yields a resistance of 2.2(±2.0) × 10-6 Ωcm2. The latter is believed to be the lowest value reported so far for Ohmic contacts to p-GaN. It is further shown that the contacts exhibit excellent thermal stability during annealing at 600°C.
|Number of pages||5|
|Journal||Physica Status Solidi (A) Applied Research|
|Publication status||Published - 2000 Jul 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics