Low resistance and thermally stable Pt/Ru Ohmic contacts to p-type GaN

Ja Soon Jang, Seong J. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

High-quality Pt (20 nm)/Ru (50 nm) Ohmic contacts to surface-treated p-GaN with lowest resistance and thermal stability are reported. The electrical properties and interfacial reactions of the contacts to GaN were investigated using current-voltage, Auger electron spectroscopy, and glancing angle X-ray diffraction measurements. It is shown that the as-deposited contact produces a specific contact resistance of 7.8(±2.2) × 10-4 Ωcm2, while the contact annealed at 600°C for 2 min yields a resistance of 2.2(±2.0) × 10-6 Ωcm2. The latter is believed to be the lowest value reported so far for Ohmic contacts to p-GaN. It is further shown that the contacts exhibit excellent thermal stability during annealing at 600°C.

Original languageEnglish
Pages (from-to)103-107
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume180
Issue number1
DOIs
Publication statusPublished - 2000 Jul 1
Externally publishedYes

Fingerprint

Ohmic contacts
low resistance
electric contacts
Thermodynamic stability
thermal stability
Auger electron spectroscopy
Contact resistance
Surface chemistry
contact resistance
Auger spectroscopy
electron spectroscopy
Electric properties
electrical properties
Annealing
X ray diffraction
annealing
Electric potential
electric potential
diffraction
x rays

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Low resistance and thermally stable Pt/Ru Ohmic contacts to p-type GaN. / Jang, Ja Soon; Park, Seong J.; Seong, Tae Yeon.

In: Physica Status Solidi (A) Applied Research, Vol. 180, No. 1, 01.07.2000, p. 103-107.

Research output: Contribution to journalArticle

@article{3a731378b60c4e93859ce9e90483598e,
title = "Low resistance and thermally stable Pt/Ru Ohmic contacts to p-type GaN",
abstract = "High-quality Pt (20 nm)/Ru (50 nm) Ohmic contacts to surface-treated p-GaN with lowest resistance and thermal stability are reported. The electrical properties and interfacial reactions of the contacts to GaN were investigated using current-voltage, Auger electron spectroscopy, and glancing angle X-ray diffraction measurements. It is shown that the as-deposited contact produces a specific contact resistance of 7.8(±2.2) × 10-4 Ωcm2, while the contact annealed at 600°C for 2 min yields a resistance of 2.2(±2.0) × 10-6 Ωcm2. The latter is believed to be the lowest value reported so far for Ohmic contacts to p-GaN. It is further shown that the contacts exhibit excellent thermal stability during annealing at 600°C.",
author = "Jang, {Ja Soon} and Park, {Seong J.} and Seong, {Tae Yeon}",
year = "2000",
month = "7",
day = "1",
doi = "10.1002/1521-396X(200007)180:1<103::AID-PSSA103>3.0.CO;2-M",
language = "English",
volume = "180",
pages = "103--107",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - Low resistance and thermally stable Pt/Ru Ohmic contacts to p-type GaN

AU - Jang, Ja Soon

AU - Park, Seong J.

AU - Seong, Tae Yeon

PY - 2000/7/1

Y1 - 2000/7/1

N2 - High-quality Pt (20 nm)/Ru (50 nm) Ohmic contacts to surface-treated p-GaN with lowest resistance and thermal stability are reported. The electrical properties and interfacial reactions of the contacts to GaN were investigated using current-voltage, Auger electron spectroscopy, and glancing angle X-ray diffraction measurements. It is shown that the as-deposited contact produces a specific contact resistance of 7.8(±2.2) × 10-4 Ωcm2, while the contact annealed at 600°C for 2 min yields a resistance of 2.2(±2.0) × 10-6 Ωcm2. The latter is believed to be the lowest value reported so far for Ohmic contacts to p-GaN. It is further shown that the contacts exhibit excellent thermal stability during annealing at 600°C.

AB - High-quality Pt (20 nm)/Ru (50 nm) Ohmic contacts to surface-treated p-GaN with lowest resistance and thermal stability are reported. The electrical properties and interfacial reactions of the contacts to GaN were investigated using current-voltage, Auger electron spectroscopy, and glancing angle X-ray diffraction measurements. It is shown that the as-deposited contact produces a specific contact resistance of 7.8(±2.2) × 10-4 Ωcm2, while the contact annealed at 600°C for 2 min yields a resistance of 2.2(±2.0) × 10-6 Ωcm2. The latter is believed to be the lowest value reported so far for Ohmic contacts to p-GaN. It is further shown that the contacts exhibit excellent thermal stability during annealing at 600°C.

UR - http://www.scopus.com/inward/record.url?scp=0034226511&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034226511&partnerID=8YFLogxK

U2 - 10.1002/1521-396X(200007)180:1<103::AID-PSSA103>3.0.CO;2-M

DO - 10.1002/1521-396X(200007)180:1<103::AID-PSSA103>3.0.CO;2-M

M3 - Article

VL - 180

SP - 103

EP - 107

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1

ER -