Low resistance and thermally stable Pt/Ru Ohmic contacts to p-type GaN

Ja Soon Jang, Seong J. Park, Tae Yeon Seong

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3 Citations (Scopus)


High-quality Pt (20 nm)/Ru (50 nm) Ohmic contacts to surface-treated p-GaN with lowest resistance and thermal stability are reported. The electrical properties and interfacial reactions of the contacts to GaN were investigated using current-voltage, Auger electron spectroscopy, and glancing angle X-ray diffraction measurements. It is shown that the as-deposited contact produces a specific contact resistance of 7.8(±2.2) × 10-4 Ωcm2, while the contact annealed at 600°C for 2 min yields a resistance of 2.2(±2.0) × 10-6 Ωcm2. The latter is believed to be the lowest value reported so far for Ohmic contacts to p-GaN. It is further shown that the contacts exhibit excellent thermal stability during annealing at 600°C.

Original languageEnglish
Pages (from-to)103-107
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Issue number1
Publication statusPublished - 2000 Jul 1
Externally publishedYes


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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